用HPCVD外延生长柱状结构MgB2厚膜
Growth of Epitaxial MgB2 Thick Films with Columnar Structures by Using HPCVD
摘要：
采用混合物理化学气相沉积（HPCVD）技术，在600 oC下，在Al 2 O3衬底上生长了MgB 2厚膜。为了获得高的镁蒸气压周围的基板，我们使用了一个特殊的基座具有基座帽，并实现了0.17 μ m/min的非常高的生长速率。六边形的柱状结构观察到的横截面和平面视图的透射电子显微镜（TEM）图像。对于1.7 μ m厚的薄膜，观察到Tc为40.5 K，30 K时的Jc为1.5 × 10^6 A/cm ^2。本文还讨论了柱间边界的涡钉扎机制。
英文摘要：
Epitaxial MgB2 thick films were grown on Al2O3 substrates at 600 oC by using the hybrid physical chemical vapor deposition (HPCVD) technique. In order to obtain a high magnesium vapor pressure around the substrates, we used a special susceptor having a susceptor cap and achieved a very high growth rate of 0.17 um/min. Hexgonal-shaped columnar structures were observed by cross-sectional and planar view transmission electron microscope (TEM) images. For the 1.7-um-thick film, the Tc was observed to be 40.5 K with a Jc of 1.5 x 10^6 A/cm^2 at 30 K. The vortex pinning mechanism by intercolumnar boundaries will be discussed.
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