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arXiv 0708.4239cond-mat.mtrl-sci
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Hf-Si-O系统的热力学模拟

Thermodynamic modeling of the Hf-Si-O system

Dongwon Shin, Raymundo Arróyave, Zi-Kui Liu

摘要:

通过结合已有的实验数据和第一性原理计算结果,采用CALPHAD方法对Hf-O体系进行了模拟。生成了$α$和$β$铪的特殊准随机结构,计算了氧和空位的混合行为。对于氧的总能量,考虑了振动、旋转和平移自由度。将Hf-O体系与已有的Hf-Si和Si-O体系相结合,并引入Hf-Si-O体系中的三元化合物HfSiO $_4$,计算了与薄膜工艺相关的稳定性图。

英文摘要:

The Hf-O system has been modeled by combining existing experimental data and first-principles calculations results through the CALPHAD approach. Special quasirandom structures of $α$ and $β$ hafnium were generated to calculate the mixing behavior of oxygen and vacancies. For the total energy of oxygen, vibrational, rotational and translational degrees of freedom were considered. The Hf-O system was combined with previously modeled Hf-Si and Si-O systems, and the ternary compound in the Hf-Si-O system, HfSiO$_4$ has been introduced to calculate the stability diagrams pertinent to the thin film processing.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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