Dynamical ultrafast all-optical switching of planar GaAs/AlAs photonic microcavities
Philip J. Harding, Tijmen G. Euser, Yoanna-Reine Nowicki-Bringuier, Jean-Michel Gerard, Willem L. Vos
备注：
1.) Replaced figure 1 (linear reflectivity) with a more recent and improved measurement 2.) Included a Figure of Merit for switching and compared to other recent contributions 3.) Explained more precisely the effect of embedded Quantum Dots (namely no effect on measurement) 4.) Changed wording in a few places
The authors study the ultrafast switching-on and -off of planar GaAs/AlAs microcavities. Up to 0.8% refractive index changes are achieved by optically exciting free carriers at 1720 nm and a pulse energy of 1.8 micro Joules. The cavity resonance is dynamically tracked by measuring reflectivity versus time delay with tunable laser pulses, and is found to shift by as much as 3.3 linewidths within a few picoseconds. The switching-off occurs with a decay time of around 50 ps. The authors derive the dynamic behavior of the carrier density and of the complex refractive index. They propose that the inferred 10 GHz switching rate may be tenfold improved by optimized sample growth.
Radiation pressure, electrostriction, and photothermal forces have been investigated to evidence backaction, non-linearities and quantum phenomena in cavity optomechanics. We show here through a detailed study of the relative intensity of the cavity mechanical modes observed when exciting with pulsed lasers close to the GaAs optical gap that optoelectronic forces involving real carrier excitation and deformation potential interaction are the strongest mechanism of light-to-sound transduction in semiconductor GaAs/AlAs distributed Bragg reflector optomechanical resonators. We demonstrate that t…
A multilayer GaAs/AlAs heterostructure forming a Fabry--Perot microcavity with a narrow resonance at 1.1~$μ$m was produced by molecular-beam epitaxy. Under nanosecond pulsed laser radiation, a blue shift of the resonant line, associated with a photo-induced negative change in refractive index in GaAs, was experimentally registered by using an optical parametric oscillator. The spectral shift was accompanied by a reduction in peak transmittance, associated with nonlinear intracavity absorption. Such a cavity can be used as an optical limiter at the resonant wavelength when both the spectral shi…
We report on polariton states bound to defects in planar GaAs/AlAs microcavities grown by molecular beam epitaxy. The defect types relevant for the spatial polariton dynamics in these structures are cross-hatch misfit dislocations, and point-like defects extended over several micrometers. We attribute the latter defects to Ga droplets emitted occasionally by the Ga cell during the growth. These defects, also known as oval defects, result in a dome-like local modulation of surface, which is translated into the cavity structure and leads to a lateral modulation of the cavity polariton energy of …
We study the time-resolved reflectivity spectrum of a switched planar GaAs-AlAs microcavity. Between 5 and 40 ps after the switching (pump) pulse we observe a strong excess probe reflectivity and a change of the frequency of light trapped in the cavity up to 5 linewidths away from the cavity resonance. This frequency change does not adiabatically follow the fast-changing cavity resonance. The frequency change is attributed to an accumulated phase change due to the time-dependent refractive index. An analytical model predicts dynamics in qualitative agreement with the experiments, and points to…
We explore a planar GaAs/AlAs photonic microcavity using pump-probe spectroscopy. Free carriers are excited in the GaAs with short pump pulses. The time-resolved reflectivity is spectrally resolved short probe pulses. We show experimentally that the cavity resonance and its width depend on the dynamic refractive index of both the lambda-slab and the lambda/4 GaAs mirrors. We clearly observe a double exponential relaxation of both the the cavity resonance and its width, which is due to the different recombination timescales in the lambda-slab and the mirrors. In particular, the relaxation time …
We present a correlative study of structural and optical properties of natural defects in planar semiconductor microcavities grown by molecular beam epitaxy, which are showing a localized polariton spectrum as reported in Zajac et al., Phys. Rev. B 85, 165309 (2012). The three-dimensional spatial structure of the defects was studied using combined focussed ion beam (FIB) and scanning electron microscopy (SEM). We find that the defects originate from a local increase of a GaAs layer thickness. Modulation heights of up to 140nm for oval defects and 90nm for round defects are found, while the lat…
Recent experiments demonstrated that GaAs-AlAs based micropillar cavities are promising systems for quantum optomechanics, allowing the simultaneous three-dimensional confinement of near-infrared photons and acoustic phonons in the 18-100 GHz range. Here, we investigate through numerical simulations the optomechanical properties of this new platform. We evidence how the Poisson's ratio and semiconductor-vacuum boundary conditions lead to very distinct features in the mechanical and optical three dimensional confinement. We find a strong dependence of the mechanical quality factor and strain di…
We show that when following a simple cavity design metric, a quantum well exciton-microcavity photon coupling constant can be larger than the exciton binding energy in GaAs based optical microcavities. Such a very strong coupling significantly reduces the relative electron-hole motion and makes the polaritons robust against phonon collisions. The corresponding polariton dissociation and saturation boundaries on the phase diagram are much improved, and our calculations suggest the possibility of constructing a room temperature, high power exciton-polariton laser without resorting to wide bandga…
We have performed ultrafast pump-probe experiments on a GaAs-AlAs microcavity with a resonance near 1300 nm in the "original" telecom band. We exploit the virtually instantaneous electronic Kerr effect to repeatedly and reproducibly switch a GaAs-AlAs planar microcavity. We achieve repetition times as fast as 300 fs, thereby breaking the THz modulation barrier. The rate of the switching in our experiments is only determined by optics and not by material related relaxation. Our results offer novel opportunities for fundamental studies of cavity-QED and optical information processing in sub-pico…
We report the elliptically, close to circularly polarized lasing at $\hbarω= 1.473$ and 1.522 eV from an AlAs/AlGaAs Bragg microcavity with 12 GaAs quantum wells in the active region and chiral-etched upper distributed Bragg refractor under optical pump at room temperature. The advantage of using the chiral photonic crystal with a large contrast of dielectric permittivities is its giant optical activity, allowing to fabricate a very thin half-wave plate, with a thickness of the order of the emitted light wavelength, and to realize the monolithic control of circular polarization.
We have switched GaAs/AlAs and AlGaAs/AlAs planar microcavities that operate in the "Original" (O) telecom band by exploiting the instantaneous electronic Kerr effect. We observe that the resonance frequency reversibly shifts within one picosecond. We investigate experimentally and theoretically the role of several main parameters: the material backbone and its electronic bandgap, the pump power, the quality factor, and the duration of the switch pulse. The magnitude of the shift is reduced when the backbone of the central $λ-$layer has a greater electronic bandgap; pumping with photon energie…
We have measured time-resolved the photon storage time and the quality factor of an ultrafast photonic cavity using an autocorrelator. The cavity consists of a $λ$-thick GaAs layer sandwiched between GaAs/AlAs distributed Bragg reflectors and resonates at 985 nm wavelength. The inverse relative linewidth measured with white light reflectivity is 830, while the quality factor obtained from the time resolved measurements is 1500. The photon storage time in the cavity is 0.78 ps. We show that the difference between the quality factor and the inverse relative linewidth results from inhomogeneous b…
When light is confined in all three directions and in dimensions of the order of the light wavelength, full discretization of the photon spectra and distinctive phenomena occur, the Purcell effect and the inhibition of emission of atoms being two paradigmatic examples. Diverse solid-state devices that confine light in all three dimensions have been developed and applied. Typically the confinement volume, operating wavelength, and quality factor of these resonators are set by construction, and small variations of these characteristics with external perturbations are targeted for applications in…
We report the engineering of air-voids embedded in GaAs-based photonic crystal surface emitting lasers realised by metalorganic vapour-phase epitaxy regrowth. Two distinct void geometries are obtained by modifying the photonic crystal grating profile within the reactor prior to regrowth. The mechanism of void formation is inferred from scanning transmission electron microscopy analysis, with the evolution of the growth front illustrated though the use of an AlAs/GaAs superlattice structure. Competition between rapid lateral growth of the (100) surface and slow diffusion across higher index pla…
We perform frequency- and time-resolved all-optical switching of a GaAs-AlAs micropillar cavity using an ultrafast pump-probe setup. The switching is achieved by two-photon excitation of free carriers. We track the cavity resonances in time with a high frequency resolution. The pillar modes exhibit simultaneous frequency shifts, albeit with markedly different maximum switching amplitudes and relaxation dynamics. These differences stem from the non-uniformity of the free carrier density in the micropillar, and are well understood by taking into account the spatial distribution of injected free …
We have performed ultrafast pump-probe experiments on a GaAs-AlAs microcavity with a resonance near 1300 nm in the "original" telecom band. We concentrate on ultimate-fast optical switching of the cavity resonance that is measured as a function of pump-pulse energy. We observe that at low pump-pulse energies the switching of the cavity resonance is governed by the instantaneous electronic Kerr effect and is achieved within 300 fs. At high pump-pulse energies the index change induced by free carriers generated in the GaAs start to compete with the electronic Kerr effect and reduce the resonance…
Exciton-polaritons are hybrid light-matter states that arise from strong coupling between an exciton resonance and a photonic cavity mode. As bosonic excitations, they can undergo a phase transition to a condensed state that can emit coherent light without a population inversion. This aspect makes them good candidates for thresholdless lasers, yet short exciton-polariton lifetime has made it difficult to achieve condensation at very low power densities. In this sense, long-lived symmetry-protected states are excellent candidates to overcome the limitations that arise from the finite mirror ref…
We have studied a GaAs-AlAs planar microcavity with a resonance near 1300 nm in the telecom range by ultrafast pump-probe reflectivity. By the judicious choice of pump frequency, we observe a ultimate fast and reversible decrease of the resonance frequency by more than half a linewidth due to the instantaneous electronic Kerr effect. The switch-on and switch-off? of the cavity is only limited by the cavity storage time of ?tcav = 0.3ps and not by intrinsic material parameters. Our results pave the way to supra-THz switching rates for on-chip data modulation and real-time cavity quantum electro…
We present high-reflectivity mechanical resonators fabricated from AlGaAs heterostructures for use in free-space optical cavities operating in the telecom wavelength regime. The mechanical resonators are fabricated in slabs of GaAs and patterned with a photonic crystal to increase their out-of-plane reflectivity. Characterization of the mechanical modes reveals residual tensile stress in the GaAs device layer. This stress results in higher mechanical frequencies than in unstressed GaAs and can be used for strain engineering of mechanical dissipation. Simultaneously, we find that the finite wai…
