GaAs和AlGaAs微腔中波长和材料依赖的吸收
Wavelength- and material-dependent absorption in GaAs and AlGaAs microcavities
摘要：
在以980 nm、1460 nm和1600 nm为中心的三个波长范围内跟踪了几乎相同的GaAs和Al_{0.18} Ga_{0.82} As微盘中模式的品质因数，在1600 nm波段测得的品质因数高达6.62 × 10 ^5。在考虑表面散射之后，剩余的损耗是由于体中和表面上的子带隙吸收。我们观察到，平均而言，AlGaAs的吸收比GaAs高80%，两种材料在980 nm处的吸收比1600 nm处高540%。
英文摘要：
The quality factors of modes in nearly identical GaAs and Al_{0.18}Ga_{0.82}As microdisks are tracked over three wavelength ranges centered at 980 nm, 1460 nm, and 1600 nm, with quality factors measured as high as 6.62x10^5 in the 1600-nm band. After accounting for surface scattering, the remaining loss is due to sub-bandgap absorption in the bulk and on the surfaces. We observe the absorption is, on average, 80 percent greater in AlGaAs than in GaAs and in both materials is 540 percent higher at 980 nm than at 1600nm.
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