超快开关GaAs/AlAs微腔的时间分辨共振和线宽
Time-resolved resonance and linewidth of an ultrafast switched GaAs/AlAs microcavity
摘要：
利用泵浦-探测光谱技术研究了平面GaAs/AlAs光子微腔。用短泵浦脉冲在GaAs中激发自由载流子。时间分辨反射率是光谱分辨的短探测脉冲。实验结果表明，腔的谐振频率和谐振宽度依赖于λ/4 GaAs反射镜和λ/4 GaAs反射镜的动态折射率。我们清楚地观察到一个双指数弛豫的腔共振和它的宽度，这是由于不同的复合时间尺度的厚片和镜子。特别是，由于GaAs反射镜的弛豫时间接近腔的光子存储时间，已经预测了非线性效应的制度。共振和宽度的强非单指数行为与考虑两个复合时间的转移矩阵模型非常一致。宽度的变化导致反射率调制深度的变化。该模型预测一个最佳的腔Q为任何给定的诱导载流子密度，如果调制深度是最大化。
英文摘要：
We explore a planar GaAs/AlAs photonic microcavity using pump-probe spectroscopy. Free carriers are excited in the GaAs with short pump pulses. The time-resolved reflectivity is spectrally resolved short probe pulses. We show experimentally that the cavity resonance and its width depend on the dynamic refractive index of both the lambda-slab and the lambda/4 GaAs mirrors. We clearly observe a double exponential relaxation of both the the cavity resonance and its width, which is due to the different recombination timescales in the lambda-slab and the mirrors. In particular, the relaxation time due to the GaAs mirrors approaches the photon storage time of the cavity, a regime for which nonlinear effects have been predicted. The strongly non-single exponential behavior of the resonance and the width is in excellent agreement to a transfer-matrix model taking into account two recombination times. The change in width leads to a change in reflectivity modulation depth. The model predicts an optimal cavity Q for any given induced carrier density, if the modulation depth is to be maximized.
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