邻位硅表面：从阶跃密度波到刻面
Vicinal silicon surfaces: from step density wave to faceting
摘要：
本文研究了在原子台阶透明的情况下，电迁移引起的刻面机制。为了这个目的，我们研究了几个邻位取向的手段，在原位（光学衍射，电子显微镜）以及异位（原子力显微镜，microprofilometry）可视化技术。数据显示，刻面过程分为两个阶段。第一阶段是短的，并导致一个阶梯密度波的外观，与波长大致独立的表面取向。第二个阶段是慢得多，并导致形成的山丘和山谷结构，其周期取决于初始表面取向。一个简单的连续模型使我们能够指出为什么阶跃密度波的波长不依赖于表面的微观细节。最终的波长是由弹性台阶之间的相互作用和刻面边缘的能量成本之间的竞争控制。最后，表面应力的角度依赖性出现作为一个粗粒度的图片从步骤模型。
英文摘要：
This paper investigates faceting mechanisms induced by electromigration in the regime where atomic steps are transparent. For this purpose we study several vicinal orientations by means of in-situ (optical diffraction, electronic microscopy) as well as ex-situ (AFM, microprofilometry) visualization techniques. The data show that faceting proceeds in two stages. The first stage is short and leads to the appearance of a step density wave, with a wavelength roughly independent of the surface orientation. The second stage is much slower, and leads to the formation of a hill-and-valley structure, the period of which depends on the initial surface orientation. A simple continuum model enables us to point out why the wavelength of the step density wave does not depend on the microscale details of the surface. The final wavelength is controlled by the competition between elastic step-step interaction and facet edge energy cost. Finally, the surface stress angular dependence is shown to emerge as a coarsed-grained picture from the step model.
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