在近邻硅表面上原子精确的三步阶梯：它是Si(5 5 7)、Si(7 7 10)还是Si(8 8 11)？
Atomically precise triple-step staircase on a vicinal silicon surface: Is it Si(5 5 7), Si(7 7 10) or Si(8 8 11)?
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中文总结 AI 辅助
研究在单晶硅(5 5 7)晶片上三步周期性阵列的原子结构，通过扫描隧道显微镜研究及数据详细分析，揭示了Si(8 8 11)三步阶梯结构及周期，还提出了相关构型示意图模型。
中文摘要 AI 辅助
对在单晶硅(5 5 7)晶片上制造的三步周期性阵列进行扫描隧道显微镜研究，展示了在微米级表面积上具有相同周期性的连续台阶和Si(1 1 1)台面的几种可能原子结构。对原子分辨数据的详细分析揭示了在台面平面投影中形成周期为18b = 5.99 nm的Si(8 8 11)三步阶梯，其中b = 0.333 nm是Si(1 1 1)1x1表面原子行之间的距离。还提出了7x7或5x5重构台面和三步的几种可能构型的示意图模型。
英文摘要
Scanning tunneling microscopy studies of periodic arrays of triple steps fabricated on single-crystalline Si(5 5 7) wafers demonstrate several possible atomic structures of consecutive steps and Si(1 1 1) terraces maintaining the same periodicity on micrometer-sized surface areas. Detailed analysis of the atomically resolved data reveals the formation of Si(8 8 11) triple-step staircase with a period of 18b=5.99 nm in projection onto the terrace plane, where b=0.333 nm is the distance between atomic rows for the Si(1 1 1)1x1 surface. Schematic models for several possible configurations of either 7x7 or 5x5-reconstructed terraces and triple steps are proposed.
