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arXiv 0705.3728cond-mat.mes-hall
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空穴掺杂量子阱中费米面附近的拓扑量子相变和Berry相

Topological quantum phase transition and the Berry phase near the Fermi surface in hole-doped quantum wells

Bin Zhou, Chao-Xing Liu, Shun-Qing Shen

摘要:

我们提出了一个拓扑量子相变的量子态具有不同的Berry相位的空穴掺杂的III-V族半导体量子阱的体和结构反转不对称。占据的布洛赫态的Berry相位可以是拓扑金属态的特征。结果表明,量子阱厚度的调整可以引起二维空穴气的Berry相变。相应地,自旋霍尔电导率的跳跃伴随着Berry相的变化。该性质对系统中的杂质势具有鲁棒性。讨论了这种拓扑量子相变的实验检测。

英文摘要:

We propose a topological quantum phase transition for quantum states with different Berry phases in hole-doped III-V semiconductor quantum wells with bulk and structure inversion asymmetry. The Berry phase of the occupied Bloch states can be characteristic of topological metallic states. It is found that the adjustment of thickness of the quantum well may cause a transition of Berry phase in two-dimensional hole gas. Correspondingly, the jump of spin Hall conductivity accompanies the change of the Berry phase. This property is robust against the impurity potentials in the system. Experimental detection of this topological quantum phase transition is discussed.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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