Landau level bending near the edge of graphene, described using 2d Dirac equation, provides a microscopic framework for understanding the quantum Hall Effect (QHE) in this material. We review properties of the QHE edge states in graphene, with emphasis on the novel phenomena that arise due to Dirac character of electronic states. A method of mapping out the dispersion of the edge states using scanning tunneling probes is proposed. The Zeeman splitting of Landau levels is shown to create a particularly interesting situation around the Dirac point, where it gives rise to counter-circulating modes with opposite spin. These chiral spin modes lead to a rich variety of spin transport phenomena, including spin Hall effect, spin filtering and injection, and electric detection of spin current. The estimated Zeeman spin gap, enhanced by exchange, of a few hundred Kelvin, makes graphene an attractive system for spintronics. Comparison to recent transport measurements near nu=0 is presented.
We investigate the spin Hall effect in a single-layer graphene device with disorder and interface-induced spin-orbit coupling. Our graphene device is connected to four semi-infinite leads that are embedded in a {Landauer-Büttiker} setup for quantum transport. We show that the spin Hall angle of graphene devices exhibits mesoscopic fluctuations that are similar to metal devices. Furthermore, the product between the {maximum spin Hall angle deviation} and dimensionless longitudinal conductivity follows a universal relationship $Θ_{sH} \times σ= 0.18$. Finally, we compare the universal relation w…
We study the $ν={\pm}1/2$ fractional quantum Hall states in graphene observed by Zibrov et al. [Nat. Phys. 14, 930 (2018)]. The parton construction is employed to provide a valley unpolarized trial wave function for these states. The lattice scale valley anisotropic terms in the Hamiltonian soften the repulsion between electrons in different valleys to favor the valley unpolarized state. The validity of our proposal is corroborated by numerical calculations.
Graphene properties can be manipulated by a periodic potential. Based on the tight-binding model, we study graphene under a one-dimensional (1D) modulated magnetic field which contains both a uniform and a staggered component. New chiral current-carrying edge states are generated at the interfaces where the staggered component changes direction. These edge states lead to an unusual integer quantum Hall effect (QHE) in graphene, which can be observed experimentally by a standard four-terminal Hall measurement. When Zeeman spin splitting is considered, a novel state is predicted where the electr…
Using high quality graphene pnp junctions, we observe prominent conductance fluctuations on transitions between quantum Hall (QH) plateaus as the top gate voltage Vtg is varied. In the Vtg-B plane, the fluctuations form crisscrossing lines that are parallel to those of the adjacent plateaus, with different temperature dependences for the conductance peaks and valleys. These fluctuations arise from Coulomb-induced charging of electron- or hole-doped localized states when the device bulk is delocalized, underscoring the importance of electronic interactions in graphene in the QH regime.
Dirac and Normal Fermions in Graphite and Graphene: Implications to the Quantum Hall Effect
在准2D高取向热解石墨（HOPG）中测量的磁阻和量子霍尔效应（QHE）的Shubnikov de Haas（SdH）振荡的光谱分析[Phys.Rev.Lett. 90，156402（2003）]揭示了两种类型的载流子：具有Berry相位0的正常（有质量）电子和具有Berry相位π的Dirac类（无质量）空穴。我们证明，最近报道的整数和半整数QHE的双层和单层石墨烯同时发生在HOPG样品。
Because of the spin and Dirac-valley degrees of freedom, graphene allows the observation of one-, two- or four-component fractional quantum Hall effect in different parameter regions. We argue that some, though not all, apparently puzzling features observed in recent experiments are consistent with a two-component fractional quantum Hall effect, with the electron spin frozen but the Dirac-valley symmetry approximately intact. In the SU(4) limit, we predict that new low-energy Goldstone modes determine the stability of the fractional quantum Hall states at 2/5, 3/7 etc.; SU(4) skyrmions are not…
Extensive fractional quantum Hall effect (FQHE) has been observed in graphene-based materials. Some of the observed fractions are anomalous in that FQHE has not been established at these fractions in conventional GaAs systems. One such fraction is $4/13$, where incompressibility has recently been reported in graphene [Kumar et al., Nat. Comm. 9, 2776 (2018)]. We propose a partonic wave function at $4/13$ and show it to be a viable candidate to describe the Coulomb ground state. Using the effective edge theory, we make predictions for experimentally measurable properties of the state.
We study the magnetotransport properties of dual-gated graphene bilayers, in which the total density and layer density imbalance are independently controlled. As the bilayer is imbalanced we observe the emergence of a quantum Hall state (QHS) at filling factor $ν=0$ evinced by a plateau in the Hall conductivity, consistent with the opening of a gap between the electron and hole bands. By varying the layer density imbalance at fixed total density, we observe a suppression of the QHS at filling factors $ν=8$ and $ν=12$ when the layer densities are balanced, an observation at variance with theore…
Utilizing the Baym-Kadanoff formalism with the polarization function calculated in the random phase approximation, the dynamics of the $ν=0$ quantum Hall state in bilayer graphene is analyzed. Two phases with nonzero energy gap, the ferromagnetic and layer asymmetric ones, are found. The phase diagram in the plane $(\tildeΔ_0,B)$, where $\tildeΔ_0$ is a top-bottom gates voltage imbalance, is described. It is shown that the energy gaps in these phases scale linearly, $ΔE\sim 10 B[T]K, with magnetic field. The comparison of these results with recent experiments in bilayer graphene is presented.
The Berry phase of π in graphene is derived in a pedagogical way. The ambiguity of how to calculate this value properly is clarified. Its connection with the unconventional quantum Hall effect in graphene is discussed.
We consider the time-reversal odd dynamics of the bilayer graphene at low energies in the quantum Hall regime. A generating functional for the effective action that captures the electromagnetic response to all orders in momentum and frequency is presented and evaluated to the third order in the space-time gradient $\mathcal O(\partial^3)$. In addition, we calculate the Hall viscosity and derive an explicit relationship with the $q^2$ coefficient of the Hall conductivity. It is reminiscent of the Hoyos--Son relation in the Galilean invariant systems, which can be recovered in the limit of large…
We report observations of well developed half integer quantum Hall effect (QHE) on mono layer graphene films of 7 mm \times 7 mm in size. The graphene films are grown by chemical vapor deposition (CVD) on copper, then transferred to SiO_{2} /Si substrates, with typical carrier mobilities \approx 4000 cm^{2} /Vs. The large size graphene with excellent quality and electronic homogeneity demonstrated in this work is promising for graphene-based quantum Hall resistance standards, and can also facilitate a wide range of experiments on quantum Hall physics of graphene and practical applications expl…
The zeroth Landau level (0LL) in graphene has emerged as a flat-band platform in which distinct many-body phases can be explored with unprecedented control by simply tuning the strength and/or direction of magnetic fields1-22. A rich set of quantum Hall ferromagnetic (QHFM) phases with different lattice-scale symmetry-breaking orders are predicted to be realized in high magnetic fields when the 0LL in graphene is half filled1-8,13-16. Here we report a field-tuned continuous quantum phase transition of different valley orderings in QHFM of charge-neutral graphene on insulating tungsten diseleni…
We investigate the transport properties of high-quality single-layer graphene, epitaxially grown on a 6H-SiC(0001) substrate. We have measured transport properties, in particular charge carrier density, mobility, conductivity and magnetoconductance of large samples as well as submicrometer-sized Hall bars which are entirely lying on atomically flat substrate terraces. The results display high mobilities, independent of sample size and a Shubnikov-de Haas effect with a Landau level spectrum of single-layer graphene. When gated close to the Dirac point, the mobility increases substantially, and …
Kane and Mele predicted that in presence of spin-orbit interaction graphene realizes the quantum spin Hall state. However, exceptionally weak intrinsic spin-orbit splitting in graphene ($\approx 10^{-5}$ eV) inhibits experimental observation of this topological insulating phase. To circumvent this problem, we propose a novel approach towards controlling spin-orbit interactions in graphene by means of covalent functionalization of graphene edges with functional groups containing heavy elements. Proof-of-concept first-principles calculations show that very strong spin-orbit coupling can be induc…
Chirally stacked N-layer graphene systems with N >= 2 exhibit a variety of distinct broken symmetry states in which charge density contributions from different spins and valleys are spontaneously transferred between layers. We explain how these states are distinguished by their charge, spin, and valley Hall conductivities, by their orbital magnetizations, and by their edge state properties. We argue that valley Hall states have [N/2] edge channels per spin-valley.
Quantum spin Hall effect was first predicted in graphene. However, the weak spin orbit interaction in graphene meant that the search for quantum spin Hall effect in graphene never fructified. In this work we show how to generate the quantum spin-valley Hall effect in graphene via quantum pumping by adiabatically modulating a magnetic impurity and an electrostatic potential in a monolayer of strained graphene. We see that not only exclusive spin polarized currents can be pumped in the two valleys in exactly opposite directions but one can have pure spin currents flowing in opposite directions i…
One of the most distinctive features of graphene is its huge inter-Landau-level splitting in experimentally attainable magnetic fields which results in the room-temperature quantum Hall effect. In this paper we calculate the longitudinal conductivity induced by two-phonon scattering in graphene in a quantizing magnetic field at elevated temperatures. It is concluded that the purely phonon-induced scattering, negligible for conventional semiconductor heterostructures under quantum Hall conditions, becomes comparable to the disorder-induced contribution to the dissipative conductivity of graphen…
We demonstrate the anomalous Hall effect (AHE) in single-layer graphene exchange-coupled to an atomically flat yttrium iron garnet (YIG) ferromagnetic thin film. The anomalous Hall conductance has magnitude of ~0.09(2e2/h) at low temperatures and is measurable up to ~ 300 K. Our observations indicate not only proximity-induced ferromagnetism in graphene/YIG with large exchange interaction, but also enhanced spin-orbit coupling which is believed to be inherently weak in ideal graphene. The proximity-induced ferromagnetic order in graphene can lead to novel transport phenomena such as the quanti…
The quantum Hall effect is the seminal example of topological protection, as charge carriers are transmitted through one-dimensional edge channels where backscattering is prohibited. Graphene has made its marks as an exceptional platform to reveal new facets of this remarkable property. However, in conventional Hall bar geometries, topological protection of graphene edge channels is found regrettably less robust than in high mobility semi-conductors. Here, we explore graphene quantum Hall regime at the local scale, using a scanning gate microscope. We reveal the detrimental influence of antido…
Spin, anomalous, and valley Hall effects in graphene-based hybrid structures are studied theoretically within the Green function formalism and linear response theory. Two different types of hybrid systems are considered in detail: (i) graphene/boron nitride/cobalt(nickel), and (ii) graphene/YIG. The main interest is focused on the proximity-induced exchange interaction between graphene and magnetic substrate and on the proximity-enhanced spin-orbit coupling. The proximity effects are shown to have a significant influence on the electronic and spin transport properties of graphene. To find the …
In this article we review the quantum Hall physics of graphene based two-dimensional electron systems, with a special focus on recent experimental and theoretical developments. We explain why graphene and bilayer graphene can be viewed respectively as J=1 and J=2 chiral two-dimensional electron gases (C2DEGs), and why this property frames their quantum Hall physics. The current status of experimental and theoretical work on the role of electron-electron interactions is reviewed at length with an emphasis on unresolved issues in the field, including assessing the role of disorder in current exp…
We report on the formation of critical states in disordered graphene, at the origin of variable and unconventional transport properties in the quantum Hall regime, such as a zero-energy Hall conductance plateau in the absence of an energy bandgap and Landau level degeneracy breaking. By using efficient real-space transport methodologies, we compute both the dissipative and Hall conductivities of large size graphene sheets with random distribution of model single and double vacancies. By analyzing the scaling of transport coefficients with defect density, system size and magnetic length, we elu…
We have realized an integer quantum Hall system with superconducting contacts by connecting graphene to niobium electrodes. Below their upper critical field of 4 tesla, an integer quantum Hall effect coexists with superconductivity in the leads, but with a plateau conductance that is larger than in the normal state. We ascribe this enhanced quantum Hall plateau conductance to Andreev processes at the graphene-superconductor interface leading to the formation of so-called Andreev edge-states. The enhancement depends strongly on the filling-factor, and is less pronounced on the first plateau, du…
We obtain an analytical expression for the Hall conductivity in AAA-stacked trilayer graphene (TLG) within the linear response Kubo formalism. Interestingly, we find that the quantization of the Hall conductivity is severely dependent on the value of the chemical potential and the magnetic field. The origin of this unusual quantization, attributed to the Landau level spectrum of AAA-stacked TLG, is explained in detail. We show that is a characteristic of the multilayer graphene structures with AA stacking order.
Intrinsic spin Hall effect in the AA-stacked bilayer graphene is studied theoretically. The low-energy electronic spectrum for states in the vicinity of the Dirac points is obtained from the corresponding $\mathbf{k}\cdot\mathbf{p}$ Hamiltonian. The spin Hall conductivity in the linear response regime is determined within the Green function formalism. Conditions for the existence of spin Hall insulator phase are also analyzed, and it is shown that the spin Hall insulator phase can exist for a sufficiently large spin-orbit coupling, which opens a gap in the spectrum. The electric field perpendi…
The edge states in the integer quantum Hall effect are known to be significantly affected by electrostatic interactions leading to the formation of compressible and incompressible strips at the boundaries of Hall bars. We show here, in a combined experimental and theoretical analysis, that this does not hold for the quantum Hall effect in narrow graphene ribbons. In our graphene Hall bar, which is only 60 nm wide, we observe the quantum Hall effect up to Landau level index k=2 and show within a zero free-parameter model that the spatial extent of the compressible and incompressible strips is o…
Realization of the quantum-spin-Hall effect in graphene devices has remained an outstanding challenge dating back to the inception of the field of topological insulators. Graphene's exceptionally weak spin-orbit coupling -stemming from carbon's low mass- poses the primary obstacle. We experimentally and theoretically study artificially enhanced spin-orbit coupling in graphene via random decoration with dilute Bi2Te3 nanoparticles. Remarkably, multi-terminal resistance measurements suggest the presence of helical edge states characteristic of a quantum-spin-Hall phase; the magnetic-field and te…
We develop a theory of the valley Hall effect in high-quality graphene samples, in which strain fluctuation-induced random gauge potentials have been suggested as the dominant source of disorder. We find a near-quantized value of valley Hall conductivity in the band transport regime, which originates from an enhanced side jump of a Dirac electron when it scatters off the gauge potential. By assuming a small residue charge density our theory reproduces qualitatively the temperature- and gap-dependence of the observed valley Hall effect at the charge neutral point. Our study suggests that the va…
Quantum anomalous Hall state is expected to emerge in Dirac electron systems such as graphene under both sufficiently strong exchange and spin-orbit interactions. In pristine graphene, neither interaction exists; however, both interactions can be acquired by coupling graphene to a magnetic insulator (MI) as revealed by the anomalous Hall effect. Here, we show enhanced magnetic proximity coupling by sandwiching graphene between a ferrimagnetic insulator yttrium iron garnet (YIG) and hexagonal-boron nitride (h-BN) which also serves as a top gate dielectric. By sweeping the top-gate voltage, we o…
We report an intriguing transition from the quantum spin Hall phase to the spin Hall effect upon segregation of thallium adatoms adsorbed onto a graphene surface. Landauer-Büttiker and Kubo-Greenwood simulations are used to access both edge and bulk transport physics in disordered thallium-functionalized graphene systems of realistic sizes. Our findings not only quantify the detrimental effects of adatom clustering in the formation of the topological state, but also provide evidence for the emergence of spin accumulation at opposite sample edges driven by spin-dependent scattering induced by t…
The ballistic motion of carriers of graphene in an orthogonal electromagnetic field is investigated to explain Hall conductance of graphene under experimental conditions. With the electrical field, all electronic eigen-states have the same expectation value of the velocity operator, or classically, all carriers move in cycloids with the same average velocity. The magnitude of this velocity is just appropriate to generate the quantized Hall conductance which is in turn exactly independent of the external field. Electrical field changes each Landau level into a bundle of energies, whose overlap …
We have revealed from a numerical study that the optical Hall conductivity $σ_{xy}(ω)$ has a characteristic feature even in the ac ($\sim$ THz) regime in that the Hall plateaus are retained both in the ordinary two-dimensional electron gas and in graphene in the quantum Hall (QHE) regime, although the plateau height is no longer quantized in ac. In graphene $σ_{xy}(ω)$ reflects the unusual Landau level structure. The effect remains unexpectedly robust against a significant strength of disorder, which we attribute to an effect of localization. We predict the ac quantum Hall measurements are fea…
When a graphene layer is stressed, the strain alters the phase an electron accumulates hopping between sites in a way that can be modeled as arising from a pseudo-magnetic vector potential. We examine the case of an oscillating graphene ribbon and explore a new effect - an oscillating resistance arising from an oscillating quantum Hall effect. This pseudo-magneto-resistance is large, and depends upon the frequency and the amplitude of the acoustic oscillations. We calculate the consequences for experiment.
We studied the magneto-transport in SiO2 substrate-supported monolayer graphene and the quantum phase transitions that characterize the quantum Hall regime, using magnetic fields up to 28T and temperatures down to 4K. The analysis of the temperature dependence of the Hall and longitudinal resistivity reveals new non-universalities of the critical exponents of the plateau-insulator transition. These exponent depends on the type of disorder that governs the electrical transport, which knowledge is important for the design and fabrication of new graphene nano-devices.
Spin Hall effect due to random Rashba spin-orbit coupling in the two-dimensional honeycomb lattice of carbon atoms (graphene) is considered theoretically. Using the Green function method and diagrammatic technique we show that fluctuations of the Rashba interaction around zero average value give rise to nonzero spin Hall conductivity. Generally, the conductivity is not universal, but depends on the ratio of the total momentum and spin-flip relaxation rates.
The encapsulation of graphene in hexagonal boron nitride provides graphene on substrate with excellent material quality. Here, we present the fabrication and characterization of Hall sensor elements based on graphene boron nitride heterostructures, where we gain from high mobility and low charge charier density at room temperature. We show a detailed device characterization including Hall effect measurements under vacuum and ambient conditions. We achieve a current- and voltage-related sensitivity of up to 5700 V/AT and 3 V/VT, respectively, outpacing state-of- the-art silicon and III/V Hall s…
Observations of electron-hole asymmetry in transport through graphene devices at high magnetic field challenge prevalent models of the graphene quantum Hall effect. Here, we study this asymmetry both in conventional magnetotransport and in scanning gate microscopy maps measured in an encapsulated graphene constriction. We reveal that the presence of upstream modes and local doping in the vicinity of electrical contacts leads to a totally different picture of topological breakdown for electrons and holes, explaining the observed asymmetry.
Epitaxial graphene films were formed on the Si-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. A high-k gate stack on epitaxial graphene is realized by inserting a fully oxidized nanometer thin aluminum film as a seeding layer followed by an atomic-layer deposition process. The electrical properties of epitaxial graphene films are sustained after gate stack formation without significant degradation. At low temperatures, the quantum-Hall effect in Hall resistance is observed along with pronounced Shubnikov-de Hass oscillations in diagonal magneto-resistance …
A non-local Hall bar geometry is used to detect neutral-current Hall effects in graphene on silicon dioxide. Disorder is tuned by the addition of Au or Ir adatoms in ultra-high vacuum. A reproducible neutral-current Hall effect is found in both as-fabricated and adatom-decorated graphene. The Hall angle exhibits a complex but reproducible dependence on gate voltage and disorder, and notably breaks electron-hole symmetry. An exponential dependence on length between Hall and inverse-Hall probes indicates a neutral current relaxation length of approximately 300 nm. The short relaxation length and…
We investigate transport in a gate-defined graphene quantum point contact in the quantum Hall regime. Edge states confined to the interface of p and n regions in the graphene sheet are controllably brought together from opposite sides of the sample and allowed to mix in this split-gate geometry. Among the expected quantum Hall features, an unexpected additional plateau at 0.5 h/e^2 is observed. We propose that chaotic mixing of edge channels gives rise to the extra plateau.
Recent reports of spin-orbit coupling enhancement in chemically modified graphene have opened doors to studies of the spin Hall effect with massless chiral fermions. Here, we theoretically investigate the interaction and impurity density dependence of the extrinsic spin Hall effect in spin-orbit coupled graphene. We present a nonperturbative quantum diagrammatic calculation of the spin Hall response function in the strong-coupling regime that incorporates skew scattering and anomalous impurity density-independent contributions on equal footing. The spin Hall conductivity dependence on Fermi en…
By using four-terminal configurations, we investigated the dependence of longitudinal and diagonal resistances of a graphene p-n interface on the quantum-Hall edge-state equilibration position. The resistance of a p-n device in our four-terminal scheme is asymmetric with respect to the zero point where the filling factor ($ν$) of the entire graphene vanishes. This resistance asymmetry is caused by the chiral-direction-dependent change of the equilibration position and leads to a deeper insight into the equilibration process of the quantum-Hall edge states in a bipolar graphene system.
We theoretically study the electronic band structure and the Hall effect in the negatively-curved three-dimensional (3D) graphene network in magnetic fields. We found that special energy regions appear above and below the zero-energy Landau level, where the 3D Hall conductivity is quantized even though the spectrum is not fully gapped. The energy regions are dominated by the chiral snake states traveling along the zero magnetic field contour on the 3D surface, and the quantization of the Hall conductivity crucially depends on the topology of the contour. The exclusive energy region for the chi…
Precision quantum Hall resistance (QHR) measurements were performed on large-area epitaxial graphene device at low magnetic fields (B = 2 T - 8 T) at temperature T = 1.5 K. Hall resistance was measured using Cryogenic Current Comparator resistance bridge with high biasing current Isd = 40 micro ampere. The results showed that at B = 8 T the relative deviation of Hall resistance from the expected quantized value h/2e2 is within experimental uncertainty of 3.5 parts in 108 and remained below 0.35 parts per million (ppm) down to B = 3 T.
