We discuss memory effects in the conductance of hopping insulators due to slow rearrangements of structural defects leading to formation of polarons close to the electron hopping states. An abrupt change in the gate voltage and corresponding shift of the chemical potential change populations of the hopping sites, which then slowly relax due to rearrangements of structural defects. As a result, the density of hopping states becomes time dependent on a scale relevant to rearrangement of the structural defects leading to the excess time dependent conductivity.
General properties of the hopping transport of charge carriers in amorphous organic and inorganic materials are discussed. We consider the case where the random energy landscape in the materials is strongly spatially correlated. This is a very typical situation in the organic materials having the Gaussian density of states (DOS) and may be realized in some materials with the exponential DOS. We demonstrate that the different type of DOS leads to a very different functional form of the mobility field dependence even in the case of the identical correlation function of random energy. We provide …
Aharanov-Bohm oscillations and perfectly transmitted mode in amorphous topological insulator nanowires
KTH Royal Institute of Technology（皇家理工学院）；Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Néel（格勒诺布尔阿尔卑斯大学、法国国家科学研究中心、格勒诺布尔理工学院、内埃尔研究所）；Donostia International Physics Center (DIPC)（圣塞巴斯蒂安国际物理中心）；IKERBASQUE, Basque Foundation for Science（伊克尔巴斯克，巴斯克科学基金会）
We establish the theory of critical transport in amorphous Chern insulators and show that it lies beyond the current paradigm of topological criticality epitomized by the quantum Hall transitions. We consider models of Chern insulators on percolation-type random lattices where the average density determines the statistical properties of geometry. While these systems display a two-parameter scaling behaviour near the critical density, the critical exponents and the critical conductance distributions are strikingly nonuniversal. Our analysis indicates that the amorphous topological criticality r…
In models of hopping disorder in the absence of external fields and at the band center, the electrons are less localized in space than the standard exponential Anderson localization. A signature of this anomalous localization is the square root dependence of the logarithmic average of the conductance on the system length, in contrast to the linear length dependence for Anderson localized systems. We study the effect of a time-periodic external field in the scaling and distribution of the conductance of a quantum wire with hopping disorder. In the low-frequency regime, we show a transition betw…
Higher-order topological insulators are established as topological crystalline insulators protected by crystalline symmetries. One celebrated example is the second-order topological insulator in three dimensions that hosts chiral hinge modes protected by crystalline symmetries. Since amorphous solids are ubiquitous, it is important to ask whether such a second-order topological insulator can exist in an amorphous system without any spatial order. Here we predict the existence of a secondorder topological insulating phase in an amorphous system without any crystalline symmetry. Such a topologic…
