跳变绝缘子记忆凹陷的涨落模型
Fluctuator model of memory dip in hopping insulators
摘要：
结果表明，二维电子玻璃在金属-介电转变附近的非平衡动力学对样品内部的电场限制非常敏感，导致了近似热激活的电导行为和对栅电压的强烈非平衡电导响应，即，样品内部的电场限制导致了样品内部的非平衡电导行为。e.存储器在电导的场依赖性下降。理论帐户定性和定量的普遍温度和场的依赖性的记忆下降。
英文摘要：
We show that the non-equilibrium dynamic in two-dimensional electron glasses close to metal-dielectric transition is dramatically sensitive to electric fields confinement inside the sample, which leads to a nearly thermally activated conductance behavior and a strong non-equilibrium conductance response to the gate voltage, i. e. memory dip in a field dependence of conductance. Theory accounts qualitatively and quantitatively for the universal temperature and field dependencies of memory dip.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
