a-NbSi绝缘薄膜中热激活玻璃化和记忆下降的观察
Observation of thermally activated glassiness and memory dip in a-NbSi insulating thin films
摘要：
我们目前的电导测量非晶NbSi绝缘薄膜。这些薄膜显示出明显不同于迄今为止在无序绝缘体中报道的平衡电子特征。像在大多数研究的系统（氧化铟和粒状铝膜），一个缓慢的弛豫后观察到的电导淬火到液氦温度，这引起的MOSFET器件的存储器下降的增长。但与这些系统不同的是，这种记忆下降和相关的电导弛豫在室温下仍然可见，具有明显的温度依赖性动力学特征。
英文摘要：
We present electrical conductance measurements on amorphous NbSi insulating thin films. These films display out-of equilibrium electronic features that are markedly different from what has been reported so far in disordered insulators. Like in the most studied systems (indium oxide and granular Al films), a slow relaxation of the conductance is observed after a quench to liquid helium temperature which gives rise to the growth of a memory dip in MOSFET devices. But unlike in these systems, this memory dip and the related conductance relaxations are still visible up to room temperature, with clear signatures of a temperature dependent dynamics.
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