We give a detailed discussion of the Quantum Interference Effect Transistor (QuIET), a proposed device which exploits interference between electron paths through aromatic molecules to modulate current flow. In the off state, perfect destructive interference stemming from the molecular symmetry blocks current, while in the on state, current is allowed to flow by locally introducing either decoherence or elastic scattering. Details of a model calculation demonstrating the efficacy of the QuIET are presented, and various fabrication scenarios are proposed, including the possibility of using conducting polymers to connect the QuIET with multiple leads.
We propose a new type of molecular transistor, the Quantum Interference Effect Transistor (QuIET), based on tunable current suppression due to quantum interference. We show that any aromatic hydrocarbon ring has two-lead configurations for which current at small voltages is suppressed by destructive interference. A transistor can be created by providing phase relaxation or decoherence at a site on the ring. We propose several molecules which could tunably introduce the necessary dephasing or decoherence, as well as a proof of principle using a scanning tunneling microscope tip. Within the self…
Molecular transistors have the potential for switching with lower gate voltages than conventional field-effect transistors. We have calculated the performance of a single-molecule device in which there is interference between electron transport through the highest occupied molecular orbital and the lowest unoccupied molecular orbital of a single molecule. Quantum interference results in a subthreshold slope that is independent of temperature. For realistic parameters the change in gate potential required for a change in source-drain current of two decades is 20 mV, which is a factor of six sma…
Single particle interference lies at the heart of quantum mechanics. The archetypal double-slit experiment has been repeated with electrons in vacuum up to the more massive $C_{60}$ molecules. Mesoscopic rings threaded by a magnetic flux provide the solid-state analogous. Intra-molecular interference has been recently discussed in molecular junctions. Here we propose to exploit interference to achieve all-electrical control of a single electron spin in quantum dots, a highly desirable property for spintronics and spin-qubit applications. The device consists of an interference single electron t…
The density of states of proximitized normal nanowires interrupting superconducting rings can be tuned by the magnetic flux piercing the loop. Using these as the contacts of a single-electron transistor allows to control the energetic mirror asymmetry of the conductor, this way introducing rectification properties. In particular, we show that the system works as a diode that rectifies both charge and heat currents and whose polarity can be reversed by the magnetic field and a gate voltage. We emphasize the role of dissipation at the island. The coupling to substrate phonons enhances the effect…
We study all-carbon-hydrogen molecular transistors where zigzag graphene nanoribbons play the role of three metallic electrodes connected to a ring-shaped 18-annulene molecule. Using the nonequilibrium Green function formalism combined with density functional theory, recently extended to multiterminal devices, we show that the proposed nanostructures exhibit exponentially small transmission when the source and drain electrodes are attached in a configuration that ensures destructive interference of electron paths around the ring. The third electrode, functioning either as an attached infinite-…
We theoretically study the intraband transition spectrum of single electron transistors (SETs) composed of individual self-assembled quantum dots. The polarization of SETs is obtained by using the nonequilibrium Green's function technique and the Anderson model with three energy levels. Owing to nonradiative coupling between two excited states through the continuum of electrodes, the Fano interference effect significantly influences the peak position and intensity of infrared wavelength single-photon spectrum.
We have observed asymmetric Fano resonances in the conductance of a single electron transistor resulting from interference between a resonant and a nonresonant path through the system. The resonant component shows all the features typical of quantum dots, but the origin of the non-resonant path is unclear. A unique feature of this experimental system, compared to others that show Fano line shapes, is that changing the voltages on various gates allows one to alter the interference between the two paths.
By generalizing the classical linear response theory of stick percolation to nonlinear regime, we find that the drain current of a Nanobundle Thin Film Transistor (NB-TFT) is described under a rather general set of conditions by a universal scaling formula ID = A/LS g(LS/LC, rho_S * LS * LS) f(VG, VD), where A is a technology-specific constant, g is function of geometrical factors like stick length (LS), channel length (LC), and stick density (rho_S) and f is a function of drain (VD) and gate (VG) biasing conditions. This scaling formula implies that the measurement of full I-V characteristics…
We present a model of the molecular transistor, operation of which is based on the interplay between two physical mechanisms, peculiar to open quantum systems that act in concert: PT-symmetry breaking corresponding to coalescence of resonances at the exceptional point of the molecule, connected to the leads, and Fano-Feshbach antiresonance. This switching mechanism can be realized in particular in a special class of molecules with degenerate energy levels, i.e. diradicals, which possess mirror symmetry. At zero gate voltage infinitesimally small interaction of the molecule with the leads break…
In this article we review the basic theoretical properties of a hybrid superconducting interferometer which exploits the phase dependence of the density of states of a metallic nanowire placed in good electric contact with a superconductor to achieve high sensitivity to magnetic flux. The operation of a prototype structure based on this principle, the superconducting quantum interference proximity transistor (SQUIPT), has been recently reported. Limited power dissipation joined with the opportunity to access single-spin detection make this interferometer attractive for the investigation of the…
We present the realization and characterization of a novel-concept interferometer, the superconducting quantum interference proximity transistor (SQUIPT). Its operation relies on the modulation with the magnetic field of the density of states of a proximized metallic wire embedded in a superconducting ring. Flux sensitivities down to $\sim 10^{-5} Φ_0$Hz$^{-1/2}$ can be achieved even for a non-optimized design, with an intrinsic dissipation ($\sim 100$ fW) which is several orders of magnitude smaller than in conventional superconducting interferometers. Our results are in agreement with the th…
The design for an inductive superconducting quantum interference proximity transistor with enhanced performance, the L-SQUIPT, is presented and analyzed. The interferometer is based on a double-loop structure, where each ring comprises a superconductor-normal metal-superconductor mesoscopic Josephson weak-link and the read-out electrode is implemented in the form of a superconducting tunnel probe. Our design allows both to improve the coupling of the transistor to the external magnetic field and to increase the characteristic magnetic flux transfer functions, thereby leading to an improved ult…
We investigate the low temperature transport in 8 nm diameter Si junctionless nanowire field effect transistors fabricated by top down techniques with a wrap-around gate and two different activated doping densities. First we extract the intrinsic gate capacitance of the device geometry from a device that shows Coulomb blockade at 13 mK with over 500 Coulomb peaks across a gate voltage range of 6 V indicating the formation of a single island in the entire nanowire channel. In two other devices, doped Si:P $4\times10^{19}\,\text{cm}^{-3}$ and $2\times10^{20}\,\text{cm}^{-3}$, we observe quantum …
We propose the concept of a quantized single-electron source based on the interplay between Coulomb blockade and magnetic flux-controllable superconducting proximity effect. We show that flux dependence of the induced energy gap in the density of states of a nanosized metallic wire can be exploited as an efficient tunable energy barrier which enables charge pumping configurations with enhanced functionalities. This control parameter strongly affects the charging landscape of a normal metal island with non-negligible Coulombic energy. Under a suitable evolution of a time-dependent magnetic flux…
We report the temperature dependence of the zero-bias conductance of a single-electron transistor in the regime of weak coupling between the quantum dot and the leads. The Fano line shape, convoluted with thermal broadening, provides a good fit to the observed asymmetric Coulomb charging peaks. However, the width of the peaks increases more rapidly than expected from the thermal broadening of the Fermi distribution in a temperature range for which Fano interference is unaffected. The intrinsic width of the resonance extracted from the fits increases approximately quadratically with temperature…
We report the fabrication and characterization of an alternative design for a superconducting quantum interference proximity transistor (SQUIPT) based on a normal metal (N) probe. The absence of direct Josephson coupling between the proximized metal nanowire and the N probe allows us to observe the full modulation of the wire density of states around zero voltage and current \textit{via} the application of an external magnetic field. This results into a drastic suppression of power dissipation which can be as low as a few $\sim 10^{-17}$ W. In this context the interferometer allows an improvem…
We report the design and implementation of a high-performance superconducting quantum interference proximity transistor (SQUIPT) based on aluminum-copper (Al-Cu) technology. With the adoption of a thin and short copper nanowire we demostrate full phase-driven modulation of the proximity-induced minigap in the normal metal density of states. Under optimal bias we record unprecedently high flux-to-voltage (up to 3 mV/$Φ_0$) and flux-to-current (exceeding 100 nA/$Φ_0$) transfer function values at sub-Kelvin temperatures, where $Φ_0$ is the flux quantum. The best magnetic flux resolution (as low a…
Here we report the fabrication and characterization of fully superconducting quantum interference proximity transistors (SQUIPTs) based on the implementation of vanadium (V) in the superconducting loop. At low temperature, the devices show high flux-to-voltage (up to 0.52$\ \textrm{mV}/Φ_0$) and flux-to-current (above 12$\ \textrm{nA}/Φ_0$) transfer functions, with the best estimated flux sensitivity $\sim$2.6$\ μΦ_0/\sqrt{\textrm{Hz}}$ reached under fixed voltage bias, where $Φ_0$ is the flux quantum. The interferometers operate up to $T_\textrm{bath}\simeq$ 2 $ \textrm{K}$, with an improveme…
We demonstrate manipulation of quantum interference by controlling the competitions between weak localization (WL) and weak antilocalization (WAL) via variation of the gate voltages of double- gate amorphous InGaZnO thin-film transistors. Our study unveils the full profile of an intriguing universal dependence of the respective WL and WAL contributions on the channel conductivity. This universality is discovered to be robust against interface disorder.
Terahertz light helicity sensitive photoresponse in GaAs/AlGaAs high electron mobility transistors. The helicity dependent detection mechanism is interpreted as an interference of plasma oscillations in the channel of the field-effect-transistors (generalized Dyakonov-Shur model). The observed helicity dependent photoresponse is by several orders of magnitude higher than any earlier reported one. Also linear polarization sensitive photoresponse was registered by the same transistors. The results provide the basis for a new sensitive, all-electric, room-temperature and fast (better than 1 ns) c…
Physical phenomena underlying operation of ferroelectric field-effect transistors (FeFETs) is treated within a unified simulation framework. The framework incorporates the Landau mean-field treatment of free energy of a ferroelectric and the polarization dynamics according to Landau-Khalatnikov (LK) equation. These equations are self-consistently solved with the one-dimensional metal-oxide-semiconductor (MOS) structure electrostatics and the drift-diffusion solution for the current in the semiconductor channel. Numerical simulations demonstrate, depending on the ferroelectric (FE) thickness, b…
We present a theoretical study of a spin field-effect transistor realized in a quantum well formed in a p--doped ferromagnetic-semiconductor- nonmagnetic-semiconductor-ferromagnetic-semiconductor hybrid structure. Based on an envelope-function approach for the hole bands in the various regions of the transistor, we derive the complete theory of coherent transport through the device, which includes both heavy- and light-hole subbands, proper modeling of the mode matching at interfaces, integration over injection angles, Rashba spin precession, interference effects due to multiple reflections, a…
We report a study of transport blockade features in a quantum dot single-electron transistor, based on an undoped AlGaAs/GaAs heterostructure. We observe suppression of transport through the ground state of the dot, as well as negative differential conductance at finite source-drain bias. The temperature and magnetic field dependence of these features indicate the couplings between the leads and the quantum dot states are suppressed. We attribute this to two possible mechanisms: spin effects which determine whether a particular charge transition is allowed based on the change in total spin, an…
Using accurate dissipative DFT-NEGF atomistic-simulation techniques within the Wannier-Function formalism, we give a fresh look at the possibility of sub-10 nm scaling for high-performance CMOS applications. We show that a combination of good electrostatic control together with a high mobility is paramount to meet the stringent roadmap targets. Such requirements typically play against each other at sub-10 nm gate length for MOS transistors made of conventional semiconductor materials like Si, Ge or III-V and dimensional scaling is expected to end around 12 nm gate-length. We demonstrate that u…
Champions of spintronics often claim that spin based signal processing devices will vastly increase speed and/or reduce power dissipation compared to traditional charge based electronic devices. Yet, not a single spintronic device exists today that can lend credence to this claim. Here, I show that no spintronic device that clones conventional electronic devices, such as field effect transistors and bipolar junction transistors, is likely to reduce power dissipation significantly. For that to happen, spin-based devices must forsake the transistor paradigm of switching states by physical moveme…
Although monolayer black phosphorus (BP) or phosphorene has been successfully exfoliated and its optical properties have been explored, most of electrical performance of the devices is demonstrated on few-layer phosphorene and ultra-thin BP films. In this paper, we study the channel length scaling of ultra-thin BP field-effect transistors (FETs), and discuss a scheme for using various contact metals to change transistor characteristics. Through studying transistor behaviors with various channel lengths, the contact resistance can be extracted from the transfer length method (TLM). With differe…
Linear in the wave-vector terms of an electron Hamiltonian play an important role in topological insulators and spintronic devices. Here we demonstrate how an external electric field controls the magnitude of a linear-in-K term in the exciton Hamiltonian in wide GaAs quantum wells. The dependence of this term on the applied field in a high quality sample was studied by means of the differential reflection spectroscopy. An excellent agreement between the experimental data and the results of calculations using semi-classical non-local dielectric response model confirms the validity of the method…
Thermoelectric properties of a C60 molecular transistor are studied using Green function formalism in linear response regime. A tight-binding model is used to investigate the effect of the dimerization and coupling geometry on the electrical conductance, thermopower, and figure of merit. Increase of the connection points between the molecule and electrodes results in decrease of the number of the peaks of the electrical conductance owing to the interference effects. In addition, oscillation of the thermopower is reduced by increase of the connection points. It is also observed that the kind of…
Recent breakthroughs in quantum-dot circuit-quantum-electrodynamics (circuit-QED) systems are important both from a fundamental perspective and from the point of view of quantum photonic devices. However, understanding the applications of such setups as potential thermoelectric diodes and transistors has been missing. In this paper, via the Keldysh nonequilibrium Green's function approach, we show that cavity-coupled double quantum-dots can serve as excellent quantum thermoelectric diodes and transistors. Using an enhanced perturbation approach based on polaron-transformations, we find non-mon…
Quantum interference in coherent transport through single molecular rings may provide a mechanism to control current in molecular electronics. We investigate its applicability by using a single-particle Green function method combined with ab initio electronic structure calculations. We find that the quantum interference effect (QIE) depends strongly on the interaction between molecular pi states and contact sigma states. It is absent in small molecular rings with Au leads, such as benzene, due to strong pi-sigma hybridization, while it is preserved in large rings, such as [18]annulene, which t…
Quantum mechanical effects induced by the miniaturization of complementary metal-oxide-semiconductor (CMOS) technology hamper the performance and scalability prospects of field-effect transistors. However, those quantum effects, such as tunnelling and coherence, can be harnessed to use existing CMOS technology for quantum information processing. Here, we report the observation of coherent charge oscillations in a double quantum dot formed in a silicon nanowire transistor detected via its dispersive interaction with a radio-frequency resonant circuit coupled via the gate. Differential capacitan…
The controlled fabrication of actively switchable atomic-scale devices, in particular transistors, has remained elusive to date. Here we explain operation of an atomic-scale three-terminal device by a novel switching mechanism of bistable, self-stabilizing reconstruction of the electrode contacts at the atomic level: While the device is manufactured by electrochemical deposition, it operates entirely on the basis of mechanical effects of the solid-liquid interface. We analyze mechanically and thermally stable metallic junctions with a predefined quantized conductance of 1-5 G_0 in experiment a…
Quantum wires with periodic local Rashba spin-orbit couplings are proposed for a higher performance of spin field-effect transistor. Fano-Rashba quantum interference due to the spin-dependent modulated structure gives rise to a broad energy range of vanishingly small transmission. Tuning Rashba spin-orbit couplings can provide the on- or off-currents with extremely large on/off current ratios even in the presence of a strong disorder.
It is shown that quantum interference can be employed to create an exciton transistor. An applied potential gates the quasi-particle motion and also discriminates between quasi-particles of differing binding energy. When implemented within nanoscale assemblies, such control elements could mediate the flow of energy and information. Quantum interference can also be used to dissociate excitons as an alternative to using heterojunctions. A finite molecular setting is employed to exhibit the underlying discrete, two-particle, mesoscopic analog to Fano anti-resonance. Selected entanglement measures…
In this work, we simulate the expected device performance and the scaling perspectives of Carbon nanotube Field Effect Transistors (CNT-FETs), with doped source and drain extensions. The simulations are based on the self-consistent solution of the 3D Poisson-Schroedinger equation with open boundary conditions, within the Non-Equilibrium Green's Function formalism, where arbitrary gate geometry and device architecture can be considered. The investigation of short channel effects for different gate configurations and geometry parameters shows that double gate devices offer quasi ideal subthresho…
Fabrication of graphene field effect transistor is described which uses an intrinsic graphene on the surface of as deposited hydrogenated amorphous carbon films. Ambipolar characteristic has been demonstrated typical for graphene devices, which changes to unipolar characteristic if the surface graphene was etched in oxygen plasma. Because amorphous carbon films can be growth easily, with unlimited dimensions and no transfer of graphene is necessary, this can open new perspective for graphene electronics.
Progress in the last two decades has effectively integrated spintronics and nanomagnetics into a single field, creating a new class of spin-based devices that are now being used both to Read (R) information from magnets and to Write (W) information onto magnets. Many other new phenomena are being investigated for nano-electronic memory as described in Part II of this book. It seems natural to ask whether these advances in memory devices could also translate into a new class of logic devices. What makes logic devices different from memory is the need for one device to drive another and this cal…
The current integrated circuit (IC) technology based on conventional MOS-FET (metal-oxide-semiconductor field-effect transistor) is approaching the limit of miniaturization with increasing demand on energy. Several analog circuit applications based on graphene FETs have been demonstrated with less components comparing to the conventional technology. However, low on/off current ratio caused by the semimetal nature of graphene has severely hindered its practical applications. Here we report a graphene/MoTe2 van der Waals (vdW) vertical transistor with V-shaped ambipolar field effect transfer cha…
We consider nanojunctions in the single-electron tunnelling regime which, due to a high degree of spatial symmetry, have a degenerate many body spectrum. As a consequence, interference phenomena which cause a current blocking can occur at specific values of the bias and gate voltage. We present here a general formalism to give necessary and sufficient conditions for interference blockade also in the presence of spin polarized leads. As an example we analyze a triple quantum dot single electron transistor (SET). For a set-up with parallel polarized leads, we show how to selectively prepare the …
We propose a scheme of spin transistor using a $T$-shaped structure with local Rashba interaction. A wide antiresonance energy gap appears due to the interplay of two types of interference, the Fano-Rashba interference and the structure interference. A large current from the gap area can be obtained via changing the Rashba strength and/or the length of the sidearm by using gate voltage. The robustness of the antiresonance gap against strong disorder is demonstrated and shows the feasibility of this structure for the real application.
We study the charge transport properties of triangular quantum dot molecule (TQDM) connected to metallic electrodes, taking into account all correlation functions and relevant charging states. The quantum interference (QI) effect of TQDM resulting from electron coherent tunneling between quantum dots is revealed and well interpreted by the long distance coherent tunneling mechanism. The spectra of electrical conductance of TQDM with charge filling from one to six electrons clearly depict the many-body and topological effects. The calculated charge stability diagram for conductance and total oc…
We study a ballistic spin field-effect transistor (SFET) with special attention to the issue of multi-channel effects. The conductance modulation of the SFET as a function of the Rashba spin-orbit coupling strength is numerically examined for the number of channels ranging from a few to close to 100. Even with the ideal spin injector and collector, the conductance modulation ratio, defined as the ratio between the maximum and minimum conductances, decays rapidly and approaches one with the increase of the channel number. It turns out that the decay is considerably faster when the Rashba spin-o…
Low dimensional nano-systems are promising candidates for manipulating, controlling and capturing photons with large sensitivities and low-noise. If quantum engineered to tailor the energy of the localized electrons across the desired frequency range, they can allow devising efficient quantum sensors across any frequency domain. Here, we exploit the rich few-electrons physics to develop millimeter-wave nanodetectors employing as sensing element an InAs/InAs0.3P0.7 quantum-dot nanowire, embedded in a single electron transistor. Once irradiated with light the deeply localized quantum element exh…
We investigate multi-terminal quantum transport through single monocyclic aromatic annulene molecules, and their derivatives, using the nonequilibrium Green function approach in the self-consistent Hartree-Fock approximation. A new device concept, the Quantum Interference Effect Transistor (QuIET) is proposed, exploiting perfect destructive interference stemming from molecular symmetry, and controlling current flow by introducing decoherence and/or elastic scattering that break the symmetry. This approach overcomes the fundamental problems of power dissipation and environmental sensitivity tha…
Coherent caloritronics, the thermal counterpart of coherent electronics, has drawn growing attention since the discovery of heat interference in 2012. Thermal interferometers, diodes, transistors and nano-valves have been theoretically proposed and experimentally demonstrated by exploiting the quantum phase difference between two superconductors coupled through a Josephson junction. So far, the quantum-phase modulator has been realized in the form of a superconducting quantum interference device (SQUID) or a superconducting quantum interference proximity transistor (SQUIPT). Thence, an externa…
The light absorption and transmission of monolayer MoS$_{2}$ in a one-dimensional defective photonic crystal (d-1DPC) is theoretically investigated. The study shows that the strong interference effect decreases photon density in particular areas of the microcavity. The d-1DPC can reduce light absorption of monolayer MoS$_{2}$ and enhance light transmission. The impact of monolayer MoS$_{2}$ light absorption on the localization effect of photon is investigated when monolayer MoS$_{2}$ and the organic light-emitting diode are located in the same microcavity. However, monolayer MoS$_{2}$ does not…
The high field transport characteristics of nanostructured transistors based on layered materials are not only important from a device physics perspective but also for possible applications in next generation electronics. With the growing promise of layered materials as replacements to conventional silicon technology, we study here the high current density properties of the layered material titanium trisulfide (TiS3). We observe high breakdown current densities up to 1.7 10^6 A/cm^2 in TiS3 nanoribbon-based field-effect transistors which are among the highest found in semiconducting nanomateri…
Quantum engineering entails atom by atom design and fabrication of electronic devices. This innovative technology that unifies materials science and device engineering has been fostered by the recent progress in the fabrication of vertical and lateral heterostructures of two-dimensional materials and by the assessment of the technology potential via computational nanotechnology. But how close are we to the possibility of practical realisation of the next generation atomically thin transistors? In this perspective we analyse the outlook and the challenges of quantum- engineered transistors usin…
Hybrid superconductor-semiconductor structures attract increasing attention owing to a variety of potential applications in quantum computing devices. They can serve to the realization of topological superconducting systems, as well as gate-tunable superconducting quantum bits. Here we combine a SiGe/Ge/SiGe quantum-well heterostructure hosting high-mobility two-dimensional holes and aluminum superconducting leads to realize prototypical hybrid devices, such as Josephson field-effect transistors (JoFETs) and superconducting quantum interference devices (SQUIDs). We observe gate-controlled supe…
We investigate theoretically the transport properties of the side-coupled double quantum dots in connection with the experimental study of Sasaki {\it et al.} Phys.Rev.Lett.{\bf 103}, 266806 (2009). The novelty of the set-up consists in connecting the Kondo dot directly to the leads, while the side dot provides an interference path which affects the Kondo correlations. We analyze the oscillations of the source-drain current due to the periodical Coulomb blockade of the many-level side-dot at the variation of the gate potential applied on it. The Fano profile of these oscillations may be contro…
The superior intrinsic properties of graphene have been a key research focus for the past few years. However, external components, such as metallic contacts, serve not only as essential probing elements, but also give rise to an effective electron cavity, which can form the basis for new quantum devices. In previous studies, quantum interference effects were demonstrated in graphene heterojunctions formed by a top gate. Here phase coherent transport behavior is demonstrated in a simple two terminal graphene structure with clearly-resolved Fabry-Perot oscillations in sub-100 nm devices. By aggr…
We determine the energy splitting of the conduction-band valleys in two-dimensional (2D) electrons confined in silicon metal oxide semiconductor (Si-MOS) Hall-bar transistors. These Si-MOS Hall bars are made by advanced semiconductor manufacturing on 300 mm Si wafers and support a 2D electron gas of high quality with a maximum mobility of 17.6$\times$10$^3$cm$^2$/Vs and minimum percolation density of 3.45$\times$10$^{10}$cm$^{-2}$. Because of the low disorder, we observe beatings in the Shubnikov-de Haas oscillations that arise from the energy-split two low-lying conduction band valleys. From …
The wave nature of electrons in semiconductor nanostructures results in spatial interference effects similar to those exhibited by coherent light. The presence of spin-orbit coupling renders interference in spin space and in real space interdependent, making it possible to manipulate the electron's spin state by addressing its orbital degree of freedom. This suggests the utility of electronic analogs of optical interferometers as blueprints for new spintronics devices. We demonstrate the usefulness of this concept using the Mach-Zehnder interferometer as an example. Its spin-dependent analog r…
We study the transport through a molecular junction exhibiting interference effects. We show that these effects can still be observed in the presence of molecular vibrations if Coulomb repulsion is taken into account. In the Kondo regime, the conductance of the junction can be changed by several orders of magnitude by tuning the levels of the molecule, or displacing a contact between two atoms, from nearly perfect destructive interference to values of the order of 2e 2 /h expected in Kondo systems. We also show that this large conductance change is robust for reasonable temperatures and voltag…
Destructive quantum interference (DQI) in single molecule electronics is a purely quantum mechanical effect and entirely defined by inherent properties of the molecule in the junction such as its structure and symmetry. This definition of DQI by molecular properties alone suggests its relation to other more general concepts in chemistry as well as the possibility of deriving simple models for its understanding and molecular device design. Recently, two such models have gained wide spread attention, where one was a graphical scheme based on visually inspecting the connectivity of carbon sites i…
