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arXiv 0705.0156cond-mat.str-elcond-mat.mes-hall
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分数量子霍尔效应中的发射和吸收噪声

Emission and absorption noise in the fractional quantum Hall effect

Cristina Bena, Ines Safi

摘要:

本文计算了任意温度下分数量子霍尔效应样品的高频发射和吸收噪声。我们模拟的手性Luttinger液体(LL)的边缘,我们使用的非平衡微扰Keldysh形式主义。我们发现,非对称的高频噪声包含电子-电子相互作用的重要签名,可以用来测试Luttinger液体物理,不仅在边缘状态,但也可能在其他一维系统,如碳纳米管。特别是,我们发现,过量噪声(定义为在有限电压和零电压的噪声之间的差异)的发射和吸收组件是不同的相互作用的系统,而不是非相互作用的情况下,当它们是相同的。我们研究了约瑟夫森频率(正比于施加的电压)的噪声中出现的谐振特性,我们还分析了测量点和后向散射点之间的距离的影响。我们的大部分分析是在弱背散射极限下进行的,但我们也计算并简要讨论了隧穿机制中的高频噪声。

英文摘要:

We compute the high-frequency emission and absorption noise in a fractional quantum Hall effect (FQHE) sample at arbitrary temperature. We model the edges of the FQHE as chiral Luttinger liquids (LL) and we use the non-equilibrium perturbative Keldysh formalism. We find that the non-symmetrized high frequency noise contains important signatures of the electron-electron interactions that can be used to test the Luttinger liquid physics, not only in FQHE edge states, but possibly also in other one-dimensional systems such as carbon nanotubes. In particular we find that the emission and absorption components of the excess noise (defined as the difference between the noise at finite voltage and at zero voltage) are different in an interacting system, as opposed to the non-interacting case when they are identical. We study the resonance features which appear in the noise at the Josephson frequency (proportional to the applied voltage), and we also analyze the effect of the distance between the measurement point and the backscattering site. Most of our analysis is performed in the weak backscattering limit, but we also compute and discuss briefly the high-frequency noise in the tunneling regime.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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