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arXiv quant-ph/9810062quant-phhep-thphysics.atom-ph
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任意势阱中的Tunnel电离率

Tunneling Ionization Rates from Arbitrary Potential Wells

G. N. Gibson, G. Dunne, K. J. Bergquist

摘要:

我们提出了一个实用的数值计算技术,计算隧道电离率从任意一维势阱中的存在下,一个线性的外部电位,通过确定的宽度的共振谱密度,ρ(E),无场束缚态。虽然这种技术适用于更一般的外部电位,我们专注于电离的电子从原子和分子的直流电场,因为这有一个重要的和直接的影响,在强激光场的分子的多光子电离的理解。

英文摘要:

We present a practical numerical technique for calculating tunneling ionization rates from arbitrary 1-D potential wells in the presence of a linear external potential by determining the widths of the resonances in the spectral density, rho(E), adiabatically connected to the field-free bound states. While this technique applies to more general external potentials, we focus on the ionization of electrons from atoms and molecules by DC electric fields, as this has an important and immediate impact on the understanding of the multiphoton ionization of molecules in strong laser fields.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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