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arXiv quant-ph/0603152quant-ph
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工程量子隧穿过程中反Zeno效应的电磁操纵

Electromagnetic manipulation for anti-Zeno effect in an engineered quantum tunneling process

Lan Zhou, F. M. Hu, Jing Lu, C. P. Sun

摘要:

研究了从量子点到环形量子点阵列的不可逆量子隧穿的量子Zeno和反Zeno效应。用Anderson-Fano-Lee模型对整个系统进行建模,发现通过调节磁通量和栅电压,可以实现从量子Zeno效应到量子反Zeno效应的转变。

英文摘要:

We investigate the quantum Zeno and anti-Zeno effects for the irreversible quantum tunneling from a quantum dot to a ring array of quantum dots. By modeling the total system with the Anderson-Fano-Lee model, it is found that the transition from the quantum Zeno effect to quantum anti-Zeno effect can happen as the magnetic flux and the gate voltage were adjusted.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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