We demonstrate a method for loading surface electrode ion traps by electron impact ionization. The method relies on the property of surface electrode geometries that the trap depth can be increased at the cost of more micromotion. By introducing a buffer gas, we can counteract the rf heating assocated with the micromotion and benefit from the larger trap depth. After an initial loading of the trap, standard compensation techniques can be used to cancel the stray fields resulting from charged dielectric and allow for the loading of the trap at ultra-high vacuum.
Trapped-ion quantum technologies have been developed for decades toward applications such as precision measurement, quantum communication and quantum computation. Coherent manipulation of ions' oscillatory motions in an ion trap is important for quantum information processing by ions, however, unwanted decoherence caused by fluctuating electric-field environment often hinders stable and high-fidelity operations.. One way to avoid this is to adopt pulsed laser ablation for ion loading, a loading method with significantly reduced pollution and heat production. Despite the usefulness of the ablat…
Isotope-selective Ion Trapping via Sympathetic Cooling using a Surface-Electrode Trap with a Hole for Collimated Atomic Loading
Graduate School of Engineering Science, Osaka University（大阪大学工学研究科）；Institute for Integrated Radiation and Nuclear Science, Kyoto University（京都大学辐射核科学综合研究所）；National Institute of Information and Communications Technology（信息通信研究机构）；Center of Quantum Information and Quantum Biology, Osaka University（大阪大学量子信息与量子生物学中心）
We describe rapid, random-access loading of a two-dimensional (2D) surface-electrode ion-trap array based on two crossed photo-ionization laser beams. With the use of a continuous flux of pre-cooled neutral atoms from a remotely-located source, we achieve loading of a single ion per site while maintaining long trap lifetimes and without disturbing the coherence of an ion quantum bit in an adjacent site. This demonstration satisfies all major criteria necessary for loading and reloading extensive 2D arrays, as will be required for large-scale quantum information processing. Moreover, the alread…
Cryogenic Ion Trapping Systems with Surface-Electrode Traps
我们提出了两个简单的低温射频离子阱系统，其中低温温度和超高真空压力可以在短短12小时内达到。离子阱在液氦浴低温恒温器或低振动闭合循环低温恒温器中操作。快速的周转时间和缓冲气体冷却的可用性使该系统成为测试表面电极离子阱的理想选择。发现闭合循环低温恒温器的振动振幅低于106nm。我们评估了系统通过加载表面电极离子阱与$^{88}$ Sr $^+$离子使用激光烧蚀，这是兼容的低温环境。使用多普勒冷却，我们观察到小的离子晶体中，光学分辨的离子具有超过2500分钟的捕获寿命。
In this study, we report the first Cu-filled through silicon via (TSV) integrated ion trap. TSVs are placed directly underneath electrodes as vertical interconnections between ion trap and a glass interposer, facilitating the arbitrary geometry design with increasing electrodes numbers and evolving complexity. The integration of TSVs reduces the form factor of ion trap by more than 80%, minimizing parasitic capacitance from 32 to 3 pF. A low RF dissipation is achieved in spite of the absence of ground screening layer. The entire fabrication process is on 12-inch wafer and compatible with estab…
Design and fabrication of a micro-ion trap with a 3D-printed loading zone for improved hot-ion capture
Lawrence Livermore National Laboratory（劳伦斯利弗莫尔国家实验室）；Department of Physics, University of California, Berkeley（加州大学伯克利分校物理系）；Challenge Institute for Quantum Computation, University of California, Berkeley（加州大学伯克利分校挑战量子计算研究所）
Recent studies indicated that contamination by adatoms on the surface ion trap can generate contact potential, leading to fluctuations in patch potential. By investigating contamination induced by surface adatoms during a loading process, a direct physical image of the contamination process and the relationship between the capacitance change and the contamination from surface adatoms is examined theoretically and experimentally. From the relationship, the contamination by surface adatoms and the effect of in situ treatment process can be monitored by the capacitance between electrodes in real …
We report large-scale fabrication of perfectly functional radio frequency (RF) surface ion traps on a 12-inch glass substrate with a standard CMOS-compatible backend process. Established 12-inch foundry backend process of electroplated Cu with Au finish are employed to fabricate the surface electrodes directly on the glass wafer substrate. We tested a trap by loading it with laser-cooled 88 Sr + ions. The trap shows a stable operation with RF amplitude in the range 100-230 V at 33 MHz frequency. The ion lifetime is on the order of 30 minutes for a pressure in the vacuum chamber of 5 x 10-11 mb…
