通过设计和补偿控制微制造离子阱中的捕获电势和杂散电场
Controlling trapping potentials and stray electric fields in a microfabricated ion trap through design and compensation
摘要：
在利用捕获离子的量子信息处理中的最新进展已经证明需要能够保持和操纵许多（>10）离子的链的新离子阱架构。在这里，我们提出了一个新的线性陷阱，可扩展的互补金属氧化物半导体（CMOS）技术，是非常适合这个挑战的微制造的设计和详细的表征。44个独立控制的直流电极提供了许多自由度，需要构建非谐势阱，穿梭离子，合并和分裂离子链，精确调谐长期模式频率，并调整陷阱轴的方向。直流电极上的微加工电容器抑制射频拾取和过度微动，而顶层接地层简化了电场的建模并保护下面的陷阱结构。在基板上的局部孔提供从下面的烘箱进入捕获区域，允许通过物种选择性光电离确定性加载特定的同位素/元素序列。孔径和射频电极的形状进行了优化，以尽量减少扰动的捕获赝势。实验室实验验证了模拟电势并表征了捕获寿命、杂散电场和离子加热速率，而空间变化杂散电场的测量和消除可以形成几乎等间距的离子链。
英文摘要：
Recent advances in quantum information processing with trapped ions have demonstrated the need for new ion trap architectures capable of holding and manipulating chains of many (>10) ions. Here we present the design and detailed characterization of a new linear trap, microfabricated with scalable complementary metal-oxide-semiconductor (CMOS) techniques, that is well-suited to this challenge. Forty-four individually controlled DC electrodes provide the many degrees of freedom required to construct anharmonic potential wells, shuttle ions, merge and split ion chains, precisely tune secular mode frequencies, and adjust the orientation of trap axes. Microfabricated capacitors on DC electrodes suppress radio-frequency pickup and excess micromotion, while a top-level ground layer simplifies modeling of electric fields and protects trap structures underneath. A localized aperture in the substrate provides access to the trapping region from an oven below, permitting deterministic loading of particular isotopic/elemental sequences via species-selective photoionization. The shapes of the aperture and radio-frequency electrodes are optimized to minimize perturbation of the trapping pseudopotential. Laboratory experiments verify simulated potentials and characterize trapping lifetimes, stray electric fields, and ion heating rates, while measurement and cancellation of spatially-varying stray electric fields permits the formation of nearly-equally spaced ion chains.
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