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arXiv quant-ph/0509120quant-ph
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顺磁缺陷处自旋拉比振荡的超灵敏电学探测

The ultra-sensitive electrical detection of spin Rabi oscillation at paramagnetic defects

Christoph Boehme, Klaus Lips

摘要:

简要回顾了脉冲电检测磁共振(pEDMR)实验。PEDMR允许通过瞬态电流测量来高度灵敏地观察半导体中的载流子和缺陷的相干电子自旋运动。讨论了该方法的理论基础、实验实现、灵敏度及其在半导体电子跃迁研究中的潜力。以晶体硅(111)-二氧化硅界面上的P_b中心为例,用实验方法说明了如何探测自旋拉比振荡及其退相、相干衰减和自旋耦合效应。

英文摘要:

A short review of the pulsed electrically detected magnetic resonance (pEDMR) experiment is presented. PEDMR allows the highly sensitive observation of coherent electron spin motion of charge carriers and defects in semiconductors by means of transient current measurements. The theoretical foundations, the experimental implementation, its sensitivity and its potential with regard to the investigation of electronic transitions in semiconductors are discussed. For the example of the P_b center at the crystalline silicon (111) to silicon dioxide interface it is shown experimentally how one can detect spin Rabi-oscillation, its dephasing, coherence decays and spin-coupling effects.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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