极紫外光掩模的严格有限元模拟：形状和材料参数的影响
Rigorous FEM-Simulation of EUV-Masks: Influence of Shape and Material Parameters
摘要：
我们提出了严格的模拟EUV掩模的技术缺陷，如侧壁角和角落的粗糙度。我们进行了两个不同的几何参数的优化，以适应从实验散射测量得到的结果的数值结果。对于数值模拟，我们使用不规则网格的自适应有限元方法。这使我们有机会精确地模拟几何结构。此外，我们评论使用区域分解技术的EUV掩模模拟。掩模的几何参数对衍射图样有很大的影响。我们表明，使用精确的模拟工具，它是可能的，推导出相关的几何参数的EUV掩模从散射测量。这项工作是先进掩模技术中心（AMTC，掩模制造），Physikalisch-Technische Bundesanstalt（PTB，散射测量），Zuse Institute Berlin（ZIB）和JCMwave（数值模拟）之间合作的结果。
英文摘要：
We present rigorous simulations of EUV masks with technological imperfections like side-wall angles and corner roundings. We perform an optimization of two different geometrical parameters in order to fit the numerical results to results obtained from experimental scatterometry measurements. For the numerical simulations we use an adaptive finite element approach on irregular meshes. This gives us the opportunity to model geometrical structures accurately. Moreover we comment on the use of domain decomposition techniques for EUV mask simulations. Geometric mask parameters have a great influence on the diffraction pattern. We show that using accurate simulation tools it is possible to deduce the relevant geometrical parameters of EUV masks from scatterometry measurements. This work results from a collaboration between Advanced Mask Technology Center (AMTC, mask fabrication), Physikalisch-Technische Bundesanstalt (PTB, scatterometry), Zuse Institute Berlin (ZIB), and JCMwave (numerical simulation).
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