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arXiv physics/0608260physics.optics
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半导体激光器有线宽理论吗?

Is there a linewidth theory for semiconductor lasers?

B. Spivak, S. Luryi

摘要:

半导体激光器产生开始于临界注入,此时增益谱和损耗谱在奇异频率处彼此接触。在标准(Schawlow-Townes-Lax-Henry)理论的框架中,有限线宽是由与随机自发辐射过程相关联的波动的帐户产生的。这种方法是基于这样的假设,即在平均场近似的奇异频率产生持续高于临界注入水平。我们表明,这种假设的玻尔兹曼动力学方程的框架内的电子和光子是无效的,因此,半导体激光器线宽的标准描述缺乏理论基础。标准理论的实验支持也是值得怀疑的。

英文摘要:

Semiconductor laser generation begins at a critical injection when the gain and loss spectra touch each other at a singular frequency. In the framework of the standard (Schawlow-Townes-Lax-Henry) theory, the finite linewidth results from the account of fluctuations associated with the random spontaneous emission processes. This approach is based on the assumption that in the mean-field approximation the singular frequency generation persists for injection levels higher than critical. We show that this assumption in the framework of the Boltzmann kinetic equation for electrons and photons is invalid and therefore the standard description of semiconductor laser linewidth lacks theoretical foundation. Experimental support of the standard theory is also questionable.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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