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arXiv physics/0605073physics.ins-det
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InGaAs/InP单光子雪崩二极管探测器的设计、制造和特性

Design, fabrication and characterisation of InGaAs/InP single-photon avalanche diode detectors

Ryan E. Warburton, Sara Pellegrini, Lionel Tan, Jo Shien Ng, Andrey Krysa, Kris Groom, John P. R. David, Sergio Cova, Gerald S. Buller

摘要:

本文演示了平面几何结构的InGaAs/InP雪崩二极管的性能,专门设计和制造的盖革模式操作在1550 nm左右的波长,在暗计数率,单光子探测效率,后脉冲和光子定时抖动。

英文摘要:

This paper demonstrates the performance of planar geometry InGaAs/InP avalanche diodes, specifically designed and fabricated for Geiger-mode operation at wavelengths around 1550nm, in terms of dark count rate, single-photon detection efficiency, afterpulsing and photon-timing jitter.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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