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arXiv physics/0505177physics.optics
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光发射电子显微镜作为研究光学近场的工具

Photoemission Electron Microscopy as a tool for the investigation of optical near fields

M. Cinchetti, A. Gloskovskii, S. A. Nepjiko, G. Schönhense, H. Rochholz, M. Kreiter

摘要:

光发射电子显微镜被用来成像的电子从专门定制的银纳米粒子沉积在硅基板(与其原生氧化物SiO $_{x}$)的光发射。通过分别用Hg UV灯(光子能量截止$\hbarω_{UV}=5.0$ eV,波长$λ_{UV}=250$ nm)和用Ti:蓝宝石飞秒激光器($\hbarω_{l}=3.1$ eV,$λ_{l}=400$ nm,脉冲宽度低于200 fs)照射来诱导光发射。虽然在高于银等离子体频率的能量下照射时观察到来自金属的均匀光电子发射,但在较低的光子能量下,发射局限于结构的尖端。这被解释为一个签名的局部电场,因此提供了一个工具来映射的光学近场与发射电子显微镜的分辨率。

英文摘要:

Photoemission electron microscopy was used to image the electrons photoemitted from specially tailored Ag nanoparticles deposited on a Si substrate (with its native oxide SiO$_{x}$). Photoemission was induced by illumination with a Hg UV-lamp (photon energy cutoff $\hbarω_{UV}=5.0$ eV, wavelength $λ_{UV}=250$ nm) and with a Ti:Sapphire femtosecond laser ($\hbarω_{l}=3.1$ eV, $λ_{l}=400$ nm, pulse width below 200 fs), respectively. While homogeneous photoelectron emission from the metal is observed upon illumination at energies above the silver plasmon frequency, at lower photon energies the emission is localized at tips of the structure. This is interpreted as a signature of the local electrical field therefore providing a tool to map the optical near field with the resolution of emission electron microscopy.

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