GEM在氦和氖中低温运行
GEM operation in helium and neon at low temperatures
摘要：
本文研究了2.6-293 K温度范围内He、Ne和Ne+ H_2气体中气体电子倍增器的性能。在He中，在62和293 K之间的温度下，三重GEM结构通常以超过1000的相当高的增益工作。有迹象表明，这种高增益是通过脱气释放的气体杂质中的潘宁效应实现的。在较低的温度下，增益电压特性显着修改可能是由于杂质的冻结。特别是，双GEM和单GEM结构可以在气体密度约为0.5 g/l时以仅达到几十的增益工作到2.6 K;在更高的密度下，最大增益进一步下降。在Ne中，最大增益也在低温下下降。在Ne+ H_2的Penning混合物中，在低温下Ne的增益下降可以重新建立：在50-60 K下，在这些混合物中获得了非常高的增益，超过10000，其密度为9.2 g/l，对应于接近27 K的饱和Ne蒸气的密度。所得结果对太阳中微子和低温电子雪崩的两相He和Ne探测器的研究具有重要意义。
英文摘要：
We study the performance of Gas Electron Multipliers (GEMs) in gaseous He, Ne and Ne+H2 at temperatures in the range of 2.6-293 K. In He, at temperatures between 62 and 293 K, the triple-GEM structures often operate at rather high gains, exceeding 1000. There is an indication that this high gain is achieved by Penning effect in the gas impurities released by outgassing. At lower temperatures the gain-voltage characteristics are significantly modified probably due to the freeze-out of impurities. In particular, the double-GEM and single-GEM structures can operate down to 2.6 K at gains reaching only several tens at a gas density of about 0.5 g/l; at higher densities the maximum gain drops further. In Ne, the maximum gain also drops at cryogenic temperatures. The gain drop in Ne at low temperatures can be reestablished in Penning mixtures of Ne+H2: very high gains, exceeding 10000, have been obtained in these mixtures at 50-60 K, at a density of 9.2 g/l corresponding to that of saturated Ne vapor near 27 K. The results obtained are relevant in the fields of two-phase He and Ne detectors for solar neutrino detection and electron avalanching at low temperatures.
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