PIN光电二极管表面不灵敏层厚度的测量
Measurement of the thickness of an insensitive surface layer of a PIN photodiode
摘要：
我们测量了东京Axion日光镜中使用的PIN光电二极管Hamamatsu S3590-06的不敏感表面层的厚度。我们让α粒子以不同的入射角撞击PIN光电二极管，并测量脉冲高度以估计不敏感表面层的厚度。该测量表明其厚度为$0.31 \pm 0.02 μm$，假设不敏感层由Si组成。考虑到不敏感层、X射线和俄歇电子的逃逸，计算了低能X射线的峰值探测效率。实验结果表明，对4- 10 keV的X射线，效率大于95%。
英文摘要：
We measured the thickness of an insensitive surface layer of a PIN photodiode, Hamamatsu S3590-06, used in the Tokyo Axion Helioscope. We made alpha-particles impinge on the PIN photodiode in various incidence angles and measured the pulse height to estimate the thickness of the insensitive surface layer. This measurement showed its thickness was $0.31 \pm 0.02 μm$ on the assumption that the insensitive layer consisted of Si. We calculated the peak detection efficiency for low energy x-rays in consideration of the insensitive layer and escape of x-rays and Auger electrons. This result showed the efficiency for 4-10keV x-rays was more than 95%.
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