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arXiv physics/0503223physics.ins-det
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微像素室中电子漂移和气体倍增的模拟研究

Simulation study of electron drift and gas multiplication in Micro Pixel Chamber

Tsutomu Nagayoshi, Atsushi Takada, Hidetoshi Kubo, Kentaro Miuchi, Reiko Orito, Yoko Okada, Atsushi Takeda, Toru Tanimori, Masaru Ueno, Oleg Bouianov, Marina Bouianov

摘要:

采用三维模拟方法详细研究了微像素室(mu-PIC)的电荷收集和气体倍增的物理过程。计算了几种电极结构的初级电子收集效率和气体倍增因子。基于这些研究,我们分析了μ-PIC电极结构的优化,以获得大于10^4的高气体增益和同时抑制放电。因此,我们发现,这些特性强烈依赖于基板的厚度和μ-PIC的阳极直径。此外,对于具有> 150 μ π ι的厚衬底的μ-PIC,将预期10^5的气体增益。

英文摘要:

The physical processes of charge collection and gas multiplication of a Micro Pixel Chamber (mu-PIC) were studied in detail using a three-dimensional simulation. The collection efficiencies of primary electrons and gas multiplication factors were calculated for several electrode structures. Based on those studies, we analyzed the optimization of the electrode structure of the mu-PIC, in order to obtain a high gas gain of more than 10^4 and a simultaneous suppression of discharges. Consequently, we found that these characteristics strongly depend on the substrate thickness and the anode diameter of the mu-PIC. In addition, a gas gain of 10^5 would be expected for a mu-PIC having a thick substrate of > 150um.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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