高阻CdZnTe探测器Pt肖特基接触特性
Properties of Pt Schottky Type Contacts On High-Resistivity CdZnTe Detectors
摘要：
在本文中，我们目前的I-V特性的研究与Pt接触的CdZnTe探测器制造的高电阻率单晶体的高压Brigman过程。我们已经分析了实验的I-V曲线，使用一个模型，近似CZT探测器作为一个系统组成的反向肖特基接触串联体电阻。对实验数据的最小二乘法拟合得出Pt-CZT肖特基势垒高度为0.78-0.79 eV，耗尽2 mm厚CZT检测器所需的电压<20 V。我们表明，在高偏压的肖特基势垒，其高度降低，由于接触和CZT材料之间的界面层，控制探测器的漏电流的肖特基电流。在许多情况下，暗电流不是由块体材料的电阻率决定的，而是由触点的性质决定的;即由触点和CZT材料之间的界面层决定的。
英文摘要：
In this paper we present studies of the I-V characteristics of CdZnTe detectors with Pt contacts fabricated from high-resistivity single crystals grown by the high-pressure Brigman process. We have analyzed the experimental I-V curves using a model that approximates the CZT detector as a system consisting of a reversed Schottky contact in series with the bulk resistance. Least square fits to the experimental data yield 0.78-0.79 eV for the Pt-CZT Schottky barrier height, and <20 V for the voltage required to deplete a 2 mm thick CZT detector. We demonstrate that at high bias the thermionic current over the Schottky barrier, the height of which is reduced due to an interfacial layer between the contact and CZT material, controls the leakage current of the detectors. In many cases the dark current is not determined by the resistivity of the bulk material, but rather the properties of the contacts; namely by the interfacial layer between the contact and CZT material.
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