用于生长探测器级 CdZnTe 单晶的移动加热器法开发
Development of travelling heater method for growth of detector grade CdZnTe single crystals
AI总结：
本文自主开发实验室规模 THM 系统，通过优化温度梯度与生长速率制备探测器级 CdZnTe 单晶，并验证其高电阻率和优异伽马能谱性能。
摘要：
我们报道了用于生长探测器级 Cd0.9Zn0.1Te（CdZnTe）单晶的实验室规模移动加热器法（THM）系统的自主设计与开发。THM 系统主要由双温区炉以及高精度平移和旋转组件构成，双温区炉具有可调温度梯度（30–80 °C/cm），平移速度为每天 1–25 mm，旋转速度为 1–50 rpm，以满足生长探测器级 CdZnTe 单晶所必需的严格条件。此外，THM 系统中的称重传感器能够对生长过程进行连续监测。为获得大晶粒单晶，研究人员开展了系统的生长实验以优化各种生长参数。本文详细讨论了温度梯度和生长速率对晶粒尺寸增大的影响。每次成功的生长实验都能从 100 g CdZnTe 初始装料中获得至少四个尺寸为 10 × 10 × 5 mm³ 的探测器级元件。利用 Laue、近红外透射光谱和 I–V 特性评估了探测器元件的结晶性质和质量。研究筛选出电阻率大于约 1–10 GΩ·cm 的晶体用于伽马射线探测测试。137Cs 的光电峰在 662 keV 下得到分辨，能量分辨率为 4.2%，测得的电子迁移率寿命积约为 3.3 × 10⁻³ cm²/V。以相对较高的 μτ 积实现伽马射线探测，证明了自主开发的 THM 系统成功生长出探测器级 CdZnTe 单晶。
英文摘要：
We report on the indigenous design and development of laboratory scale travelling heater method (THM) system to grow detector grade Cd0.9Zn0.1Te (CdZnTe) single crystals. THM system mainly consists of two-zone furnace with a tuneable temperature gradient (30 - 80 C/cm), high precision translation (1 - 25 mm per day) and rotation (1 - 50 rpm) assemblies to meet the stringent conditions that are essential to grow detector grade CdZnTe single crystals. Further, a load cell in the THM system enables continuous monitoring of the growth. Systematic growth experiments were performed to optimize the various growth parameters in order to achieve large grain single crystals. Herein, the effect of temperature gradient and growth rate on the increase in grain size is discussed in detail. Each successful growth experiment yields a minimum of four detector grade elements of dimensions 10 x 10 x 5 mm3 from a starting charge of 100 g of CdZnTe. The crystalline nature and quality of the detector elements were evaluated using Laue, NIR transmission spectroscopy and I-V characteristics. Crystals with resistivity greater than ~ 1-10 giga-ohm-cm were identified for testing gamma ray detection. The photo peak of 137Cs was resolved with an energy resolution of 4.2 % at 662 keV and its measured electron mobility lifetime product is found to be ~ 3.3 x 10-3 cm2/V. The demonstration of the gamma ray detection with a relatively high μτ product is the testimony to the successful growth of detector grade CdZnTe single crystals by an indigenously developed THM system.
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