用于辐射研究的Al/p-Si肖特基和pn结的设计、制造与测试
Design, fabrication and testing of Al/p-Si Schottky and pn junctions for radiation studies
AI总结：
本文设计并制造了用于高能物理辐射研究的Al/p-Si肖特基和pn结二极管，提供了辐照前的测试结果，以支持辐射损伤建模和器件优化。
摘要：
在高电阻率硅衬底（通常为p型）上制造的条形和像素传感器，通常以混合探测器组件的形式用于高能物理（HEP）探测器。此外，由于与混合传感器相比具有固有优势，采用CMOS技术制造的单片有源像素传感器（MAPS）已越来越多地应用于HEP实验。在所有情况下，它们在更高辐射区域（HL-LHC及以后）的使用将需要提高其辐射耐受性和时间分辨率的选项。这些方面要求深入了解其辐射损伤，并建立可靠模型以预测其在高通量下的行为。作为第一步，我们在6英寸或4英寸p型硅晶圆上制造了多个肖特基和n-on-p二极管，其外延层厚度为50 μm，掺杂浓度与HEP探测器和CMOS MAPS器件通常使用的相同，以便比较结果并为测试器件提供备用方案。本文提供了设计和制造过程的细节，以及制造器件在辐照前的测试结果。辐照器件的额外测试结果将在后续出版物中提供。
英文摘要：
Strip and pixels sensors, fabricated on high resistivity silicon substrate, normally of p-type, are used in detectors for High Energy Physics (HEP) typically in a hybrid detector assembly. Furthermore, and owing to their inherent advantages over hybrid sensors, Monolithic Active Pixel Sensors (MAPS) fabricated in CMOS technology have been increasingly implemented in HEP experiments. In all cases, their use in higher radiation areas (HL-LHC and beyond) will require options to improve their radiation hardness and time resolution. These aspects demand a deep understanding of their radiation damage and reliable models to predict their behaviours at high fluences. As a first step, we fabricated several Schottky and n-on-p diodes, to allow a comparison of results and provide a backup solution for test devices, on 6 or 4-inch p-type silicon wafers with 50 μm epitaxial thickness and of doping concentration as they are normally used in HEP detectors and CMOS MAPS devices. In this paper, details of the design and fabrication process, along with test results of the fabricated devices before irradiation, will be provided. Additional test results on irradiated devices will be provided in subsequent publications.
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