Si（111）- SiO $_2$埋层界面的二次谐波干涉光谱
Second-harmonic interferometric spectroscopy of the buried Si(111)-SiO$_2$ interface
摘要：
二次谐波干涉光谱（SHIS）结合了二次谐波（SH）辐射的振幅（强度）和相位谱，是一种对半导体表面结合态密度临界点（CP）类型敏感的新光谱技术。对于埋层Si（111）-$_2$界面，SH光子能量从3.6 eV到5 eV，SHIS技术的灵敏度得到了提高，并且可以分离硅的$E^\prime_0/E_1$、$E_2$和$E^\prime_1$ CP的共振贡献。
英文摘要：
The second-harmonic interferometric spectroscopy (SHIS) which combines both amplitude (intensity) and phase spectra of the second-harmonic (SH) radiation is proposed as a new spectroscopic technique being sensitive to the type of critical points (CP's) of combined density of states at semiconductor surfaces. The increased sensitivity of SHIS technique is demonstrated for the buried Si(111)-SiO$_2$ interface for SH photon energies from 3.6 eV to 5 eV and allows to separate the resonant contributions from $E^\prime_0/E_1$, $E_2$ and $E^\prime_1$ CP's of silicon.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
