Si（001）- SiO $_2$界面的直流电场感应和低频电调制二次谐波光谱
DC-electric-field-induced and low-frequency electromodulation second-harmonic generation spectroscopy of Si(001)-SiO$_2$ interfaces
摘要：
利用可调谐钛宝石飞秒激光二次谐波产生（SHG）技术，对平面Si（001）-SiO $_2$ -Cr MOS结构中弱非线性埋层Si（001）-SiO $_2$界面的直流电场诱导二次谐波（EFISH）产生机理进行了实验研究。提取了硅的直接双光子$E_1$跃迁附近的EFISH贡献的光谱依赖性。一个系统的EFISH现象的唯象模型，包括在积累，耗尽和反型制度的电容器-电介质界面的空间电荷区（SCR）的详细描述，已经开发。考虑了表面量子化效应、界面态、氧化层中的电荷陷阱、掺杂浓度和氧化层厚度对直流电场的非局域屏蔽和SCR中反转对称性破缺的影响。该模型描述了EFISH代SCR使用格林函数形式主义，它考虑到所有的延迟和吸收效应的基本和二次谐波（SH）波，光之间的干涉场依赖和场无关的贡献SH字段和多次反射干涉的SiO $_2$层。的唯象模型和我们最近和新的EFISH光谱结果之间的良好协议被证明。最后，低频电调制EFISH被证明是一个有用的差分光谱技术的硅基MOS结构中的Si-SiO $_2$界面的研究。
英文摘要：
The mechanism of DC-Electric-Field-Induced Second-Harmonic (EFISH) generation at weakly nonlinear buried Si(001)-SiO$_2$ interfaces is studied experimentally in planar Si(001)-SiO$_2$-Cr MOS structures by optical second-harmonic generation (SHG) spectroscopy with a tunable Ti:sapphire femtosecond laser. The spectral dependence of the EFISH contribution near the direct two-photon $E_1$ transition of silicon is extracted. A systematic phenomenological model of the EFISH phenomenon, including a detailed description of the space charge region (SCR) at the semiconductor-dielectric interface in accumulation, depletion, and inversion regimes, has been developed. The influence of surface quantization effects, interface states, charge traps in the oxide layer, doping concentration and oxide thickness on nonlocal screening of the DC-electric field and on breaking of inversion symmetry in the SCR is considered. The model describes EFISH generation in the SCR using a Green function formalism which takes into account all retardation and absorption effects of the fundamental and second harmonic (SH) waves, optical interference between field-dependent and field-independent contributions to the SH field and multiple reflection interference in the SiO$_2$ layer. Good agreement between the phenomenological model and our recent and new EFISH spectroscopic results is demonstrated. Finally, low-frequency electromodulated EFISH is demonstrated as a useful differential spectroscopic technique for studies of the Si-SiO$_2$ interface in silicon-based MOS structures.
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