用太赫兹光谱和扫描探针电位法研究polymer晶体管中的电荷俘获
Charge trapping in polymer transistors probed by terahertz spectroscopy and scanning probe potentiometry
摘要：
采用太赫兹时域光谱和扫描探针电位法研究了硅栅上聚合物场效应晶体管的电荷俘获特性。晶体管沟道中的空穴密度由在施加的栅极电压下透射的太赫兹辐射的减少来确定。长时间的设备操作在差分太赫兹传输中产生指数衰减，这与聚合物通道中被捕获的空穴的密度的增加相容。结合扫描探针电位法测量，这些结果表明，器件退化主要是空穴捕获的结果，而不是自由空穴在聚合物中的流动性的变化。
英文摘要：
Terahertz time-domain spectroscopy and scanning probe potentiometry were used to investigate charge trapping in polymer field-effect transistors fabricated on a silicon gate. The hole density in the transistor channel was determined from the reduction in the transmitted terahertz radiation under an applied gate voltage. Prolonged device operation creates an exponential decay in the differential terahertz transmission, compatible with an increase in the density of trapped holes in the polymer channel. Taken in combination with scanning probe potentionmetry measurements, these results indicate that device degradation is largely a consequence of hole trapping, rather than of changes to the mobility of free holes in the polymer.
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