场效应晶体管饱和区的太赫兹响应
Terahertz Response of Field-Effect Transistors in Saturation Regime
摘要：
我们报告的InGaAs/GaAs HEMT的宽带太赫兹响应工作在1.63太赫兹和室温深的饱和制度。我们证明，响应显示出线性增加的漏源电压（或漏偏置电流），并达到非常高的值高达170 V/W。我们还提出了在欧姆和饱和状态下都有效的唯象理论。
英文摘要：
We report on the broadband THz response of InGaAs/GaAs HEMTs operating at 1.63 THz and room temperature deep in the saturation regime. We demonstrate that responses show linear increase with drain-to-source voltage (or drain bias current) and reach very high values up to 170V/W. We also develop a phenomenological theory valid both in the ohmic and in the saturation regimes.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
