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arXiv cond-mat/0103445cond-mat.mes-hallcond-mat.dis-nn
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单沟道导体中的Andreev能级

Andreev levels in a single-channel conductor

M. Titov, N. A. Mortensen, H. Schomerus, C. W. J. Beenakker

摘要:

本文计算了无序单沟道正常金属一端(NS结)或两端(SNS结)与超导体相连的亚能隙态密度。束缚态的能量(Andreev能级)的概率分布因无序而变宽。在SNS的情况下,Andreev能级的两倍简并性被无序去除,导致除了加宽之外的分裂。分裂的分布由随机矩阵理论的Wigner表面精确给出。对于强无序的状态的平均密度在很大程度上不受接近超导体,因为本地化,除了在费米能级附近的一个狭窄的能量区域,在那里的状态密度被抑制与对数正态尾。

英文摘要:

We calculate the subgap density of states of a disordered single-channel normal metal connected to a superconductor at one end (NS junction) or at both ends (SNS junction). The probability distribution of the energy of a bound state (Andreev level) is broadened by disorder. In the SNS case the two-fold degeneracy of the Andreev levels is removed by disorder leading to a splitting in addition to the broadening. The distribution of the splitting is given precisely by Wigner's surmise from random-matrix theory. For strong disorder the mean density of states is largely unaffected by the proximity to the superconductor, because of localization, except in a narrow energy region near the Fermi level, where the density of states is suppressed with a log-normal tail.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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