半导体探测器中的各向异性电子散射和米格达尔效应
Anisotropic electron scattering and Migdal effect in semiconductor detectors
AI总结：
研究低温半导体探测器中暗物质探测，介绍计算各向异性能量损失函数事件率的实用方法，发现米格达尔率日调制仅由ELF四极分量引起，应用该方法研究硅和砷化镓探测器中的日调制。
摘要：
低温半导体探测器广泛用于暗物质直接探测。这些材料中的电子激发可由直接暗物质电子散射事件或通过暗物质核散射事件间接引起。对于轻暗物质的核散射，由于称为米格达尔效应的非弹性过程，事件率会增强。半导体中的电子反冲和米格达尔效应都通过所谓的能量损失函数（ELF）依赖于目标材料的介电函数。在文献中的标准方法中，ELF被近似为各向同性以简化事件率的计算。我们引入了一种计算一般各向异性ELF事件率的实用方法。我们发现米格达尔率的日调制仅由ELF的四极分量引起，而在电子散射中，所有球谐分量都会影响该率。我们应用该形式主义来研究硅和砷化镓探测器中的日调制。
英文摘要：
Cryogenic semiconductor detectors are widely used in dark matter direct detection. Electronic excitations in these materials can be caused either by direct dark matter electron scattering events, or indirectly via dark matter nuclear scattering events. For nuclear scattering of light dark matter, the event rate is enhanced due to an inelastic process known as the Migdal effect. Both the electron recoils and the Migdal effect in semiconductors depend on the dielectric function of the target material via the so-called energy loss function (ELF). In the standard approach found in the literature, the ELF is approximated as isotropic to simplify the calculation of the event rate. We introduce a practical method for computing the event rate for a general anisotropic ELF. We find that the daily modulation of the Migdal rate arises solely due to the quadrupole component of the ELF, whereas in electron scattering all spherical harmonic components affect the rate. We apply the formalism to study the daily modulation in silicon and gallium arsenide detectors.
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