On the relation between Migdal effect and dark matter-electron scattering in isolated atoms and semiconductors
英文摘要：
A key strategy for the direct detection of sub-GeV dark matter is to search for small ionization signals. These can arise from dark matter-electron scattering or when the dark matter-nucleus scattering process is accompanied by a "Migdal" electron. We show that the theoretical descriptions of both processes are closely related, which allows for a principal mapping between dark matter-electron and dark matter-nucleus scattering rates once the dark matter interactions with matter are specified. We explore this parametric relationship for noble-liquid targets and, for the first time, provide an estimate of the "Migdal" ionization rate in semiconductors that is based on evaluating a crystal form factor that accounts for the semiconductor band structure. We also present new dark-matter-nucleus scattering limits down to dark matter masses of 500 keV using published data from XENON10, XENON100, and a SENSEI prototype Skipper-CCD. For a dark photon mediator, the dark matter-electron scattering rates dominate over the Migdal rates for dark matter masses below 100 MeV. We also provide projections for proposed experiments with xenon and silicon targets.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
