从InP纳米光子晶体波导中量子点类埋藏异质结实现激光
Lasing from a Quantum-Dot-Like Buried Heterostructure in an InP Nanobeam Cavity
AI总结：
研究报道了在InP纳米光子晶体波导中，尺寸为(107nm)^2的埋藏异质结实现激光，探讨了异质结尺寸对激光阈值的影响，展示了量子点尺度埋藏异质结作为纳米光子激光确定性可扩展增益介质的潜力。
摘要：
我们报道了从一个通过光刻定义的埋藏异质结中实现的激光，该异质结的横向面积估计为(107 nm)^2，嵌入在InP光子晶体纳米波导腔中。这代表了目前已观测到的最小横向限制的埋藏异质结增益区域。尽管在腔体定义过程中对活性区域进行了蚀刻，存在表面相关非辐射重组的风险，但光泵浦器件表现出明显的激光阈值和狭窄的线宽。通过系统地改变BH尺寸，我们研究了在光泵浦下激光阈值如何依赖于活性体积。估计的内在阈值在理想载流子注入下为57 nW，与单个量子点纳米激光器报告的值相当，突显了量子点尺度埋藏异质结作为纳米光子激光确定性可扩展增益介质的潜力。
英文摘要：
We report lasing from a lithographically defined buried heterostructure with an estimated lateral footprint of (107 nm)^2, embedded in an InP photonic-crystal nanobeam cavity. This represents the smallest laterally confined buried heterostructure gain region from which lasing has been observed. Despite etching of the active region during cavity definition and the associated risk of surface-related nonradiative recombination, optically pumped devices exhibit a clear lasing threshold and a narrow linewidth. By systematically varying the BH size, we investigate how the lasing threshold depends on the active volume under optical pumping. The estimated intrinsic threshold under ideal carrier injection is 57 nW, comparable to values reported for single quantum-dot nanolasers, highlighting the potential of quantum-dot-scale buried heterostructures as deterministic, scalable gain media for nanophotonic lasers.
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