MOCVD生长的β-氧化镓薄膜的结晶性演变通过不同反应器高度下的原位高温XRD探测
Crystallinity Evolution of MOCVD-Grown $β$-Ga$_2$O$_3$ Films Probed by In Situ HT-XRD under Different Reactor Heights
AI总结：
研究通过不同反应器高度下的原位高温XRD探测，揭示了MOCVD生长β-氧化镓薄膜的结晶性演变与反应器高度对结晶和形貌模板的影响。
摘要：
β-氧化镓薄膜通过金属有机化学气相沉积（MOCVD）生长的结晶性受到反应器设计和由此产生的生长环境的强烈影响。在本研究中，我们通过直接比较长室和短室喷嘴配置，研究了反应器高度对MOCVD生长的β-氧化镓薄膜结晶性演变的作用。通过在加热从25°C到1100°C过程中对MOCVD生长的薄膜进行原位高温X射线衍射（HT-XRD）探测，研究了结构演变。温度依赖性XRD显示，对于两种反应器几何形状，HT-XRD加热和随后冷却到室温后，β-氧化镓（-201）反射的红移保持一致，表明了类似的热驱动应变响应。定量摇摆曲线分析显示（-201）全宽半高（FWHM）的温度依赖性非单调，短室和长室薄膜的最小值分别为约2.03°和2.72°，反映了生长过程中建立的 mosaic 对齐差异。原子力显微镜进一步显示，短室生长的薄膜具有更光滑的表面，加热前后的均方粗糙度值分别为约7.7 nm和7.3 nm，而长室生长的薄膜分别为19.3 nm和12.3 nm。总体而言，这些结果表明反应器高度影响了β-氧化镓薄膜的初始结晶和形貌模板，并调节了其高温结构响应，为优化MOCVD反应器设计以获得高质量β-氧化镓生长提供了实用见解。
英文摘要：
The crystallinity of $β$-Ga$_2$O$_3$ thin films grown by metal-organic chemical vapor deposition (MOCVD) is strongly influenced by reactor design and the resulting growth environment. In this work, we investigate the role of reactor height on the crystallinity evolution of MOCVD-grown $β$-Ga$_2$O$_3$ films by directly comparing long- and short-chamber showerhead configurations. Structural evolution was probed by in situ high-temperature X-ray diffraction (HT-XRD) as the MOCVD-grown films were heated from 25~$^\circ$C to 1100~$^\circ$C. Temperature-dependent XRD reveals a consistent redshift of the $β$-Ga$_2$O$_3$~($-201$) reflection after HT-XRD heating and subsequent cooling to room temperature for both reactor geometries, indicating a similar thermally driven strain response. Quantitative rocking-curve analysis shows a non-monotonic temperature dependence of the ($-201$) full width at half maximum (FWHM), with minimum values of approximately 2.03$^\circ$ and 2.72$^\circ$ for the short- and long-chamber films, respectively, reflecting differences in mosaic alignment established during growth. Atomic force microscopy further shows that short-chamber-grown films exhibit smoother surfaces, with root-mean-square roughness values of approximately 7.7~nm before and 7.3~nm after HT-XRD heating, compared to 19.3~nm and 12.3~nm, respectively, for long-chamber-grown films. Overall, these results indicate that reactor height influences the initial crystalline and morphological templates of $β$-Ga$_2$O$_3$ films and modulates their elevated-temperature structural response, providing practical insights for optimizing MOCVD reactor design for high-quality $β$-Ga$_2$O$_3$ growth.
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