脉冲激光退火处理SOI衬底上Ge1-xSnx和Si1-x-yGeySnx薄膜的结构变化
Structural changes in Ge1-xSnx and Si1-x-yGeySnx thin films on SOI substrates treated by pulse laser annealing
AI总结：
本文研究脉冲激光退火对SOI衬底上GeSn和SiGeSn薄膜的应变工程作用，证明PLA可改善结晶质量并将活性载流子浓度提升至4x1019 cm-3。
摘要：
Ge1-xSnx和Si1-x-yGeySnx合金是未来光电子和纳米电子学应用中极具前景的材料。这些合金能够实现有效的带隙工程，其晶格参数具有广泛的可调性，载流子迁移率远高于纯Si，并且与CMOS技术兼容。然而，Sn在Si1-xGex中的平衡固溶度不足1%，且Si1-x-yGeySnx在Ge或Si上的赝晶生长会在生长层中产生面内压缩应变，从而劣化这些合金的优异性能。因此，需要通过超快非平衡热处理（如脉冲激光退火PLA）进行生长后应变工程以改善层质量。本文中，通过分子束外延在绝缘体上硅衬底上生长的Ge0.94Sn0.06和Si0.14Ge0.8Sn0.06薄膜在生长后接受了PLA热处理。通过透射电子显微镜、X射线衍射（XRD）、卢瑟福背散射谱、二次离子质谱和霍尔效应测量对热处理前后的材料进行了分析。结果表明，退火后材料为单晶，且结晶质量较生长态层有所改善。这体现在XRD反射强度显著提高、原子柱排列有序以及活性载流子浓度增加至4x1019 cm-3。
英文摘要：
Ge1-xSnx and Si1-x-yGeySnx alloys are promising materials for future opto- and nanoelectronics applications. These alloys enable effective band-gap engineering, broad adjustability of their lattice parameter, exhibit much higher carrier mobility than pure Si, and are compatible with the CMOS technology. Unfortunately, the equilibrium solid solubility of Sn in Si1-xGex is less than 1% and the pseudomorphic growth of Si1-x-yGeySnx on Ge or Si can cause in-plane compressive strain in the grown layer, degrading the superior properties of these alloys. Therefore, post-growth strain engineering by ultrafast non-equilibrium thermal treatments like pulse laser annealing (PLA) is needed to improve the layer quality. In this article, Ge0.94Sn0.06 and Si0.14Ge0.8Sn0.06 thin films grown on silicon-on-insulator substrates by molecular beam epitaxy were post growth thermally treated by PLA. The material is analyzed before and after the thermal treatments by transmission electron microscopy, X-ray diffraction (XRD), Rutherford backscattering spectrometry, secondary ion mass spectrometry, and Hall effect measurements. It is shown that after annealing, the material is single-crystalline with improved crystallinity than the as-grown layer. This is reflected in a significantly increased XRD reflection intensity, well-ordered atomic pillars, and increased active carrier concentrations up to 4x1019 cm-3.
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