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arXiv 2509.09080cond-mat.mes-hallcond-mat.str-el
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扭曲双层MoTe2器件中电子结构的可视化

Visualizing Electronic Structure of Twisted Bilayer MoTe2 in Devices

University of Oxford(牛津大学);University of Washington(华盛顿大学);Lawrence Berkeley National Laboratory(劳伦斯伯克利国家实验室);National Institute for Materials Science(国立材料研究所)
Cheng Chen, William Holtzmann, Xiao-Wei Zhang, Eric Anderson, Shanmei He, Yuzhou Zhao, Chris Jozwiak, Aaron Bostwick, Eli Rotenberg, Kenji Watanabe, Takashi Tan… 展开作者

Cheng Chen, William Holtzmann, Xiao-Wei Zhang, Eric Anderson, Shanmei He, Yuzhou Zhao, Chris Jozwiak, Aaron Bostwick, Eli Rotenberg, Kenji Watanabe, Takashi Taniguchi, Ting Cao, Di Xiao, Xiaodong Xu, Yulin Chen

AI总结:

本研究通过μ-ARPES技术揭示了扭曲双层MoTe2的电子结构,发现其具有直接带隙并观察到分数量子反常霍尔效应。

摘要:

新兴量子现象的探索处于现代凝聚态物理的前沿。在这一领域最近的一项突破是发现扭曲双层MoTe2(tbMoTe2)中出现分数量子反常霍尔效应(FQAHE),标志着范式转变,并建立了一个探索拓扑、磁性和电子关联之间复杂相互作用的多功能平台。尽管通过光学和电输运测量取得了显著进展,但对电子结构的直接实验洞察——这对于理解和建模该系统至关重要——仍然捉襟见肘。在此,利用空间和角度分辨光电子能谱(μ-ARPES),我们直接映射了tbMoTe2的电子能带结构。我们识别出价带顶点,其部分填充导致FQAHE,位于K点,大约在Γ谷上方150 meV处。通过原位碱金属沉积调节掺杂水平,我们还解析了K点的导带底,提供了直接证据表明tbMoTe2具有直接带隙——与所有已知的莫尔双层过渡金属二硫化物系统不同。这些结果为理论建模提供了关键见解,并推进了我们对这种新兴量子材料中分数量子化激发和关联拓扑相的理解。

英文摘要:

The pursuit of emergent quantum phenomena lies at the forefront of modern condensed matter physics. A recent breakthrough in this arena is the discovery of the fractional quantum anomalous Hall effect (FQAHE) in twisted bilayer MoTe2 (tbMoTe2), marking a paradigm shift and establishing a versatile platform for exploring the intricate interplay among topology, magnetism, and electron correlations. While significant progress has been made through both optical and electrical transport measurements, direct experimental insights into the electronic structure - crucial for understanding and modeling this system - have remained elusive. Here, using spatially and angle-resolved photoemission spectroscopy (μ-ARPES), we directly map the electronic band structure of tbMoTe2. We identify the valence band maximum, whose partial filling underlies the FQAHE, at the K points, situated approximately 150 meV above the Γ valley. By fine-tuning the doping level via in-situ alkali metal deposition, we also resolve the conduction band minimum at the K point, providing direct evidence that tbMoTe2 exhibits a direct band gap - distinct from all previously known moire bilayer transition metal dichalcogenide systems. These results offer critical insights for theoretical modeling and advance our understanding of fractionalized excitations and correlated topological phases in this emergent quantum material.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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