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arXiv 2503.02471cond-mat.mes-hallcond-mat.mtrl-sci
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全范德华二维器件中的自旋注入与检测

Spin injection and detection in all-van der Waals 2D devices

Jan Bärenfänger, Klaus Zollner, Lukas Cvitkovich, Kenji Watanabe, Takashi Taniguchi, Stefan Hartl, Jaroslav Fabian, Jonathan Eroms, Dieter Weiss, Mariusz Ciorga

AI总结:

本研究利用剥离的2D材料构建全范德华异质结构,实现了高效的面外自旋注入与检测,自旋注入效率高达40%,为2D范德华自旋电子器件提供了理想平台。

摘要:

在本研究中,我们报告了仅使用剥离的2D材料,在全范德华异质结构中实现高效的面外自旋注入与检测。我们通过在Fe$_3$GeTe$_2$(FGT)、六方氮化硼(hBN)和石墨烯层的堆叠中测量非局域输运的自旋阀和Hanle信号,证明了自旋注入。FGT薄片构成了在石墨烯沟道中注入和检测自旋所必需的自旋排列电极。hBN隧穿势垒在铁磁电极与石墨烯之间提供了高质量界面,消除了电导率失配问题,从而确保了高效的自旋注入与检测,自旋注入效率高达$P=40$\%。我们的结果表明,FGT/hBN/石墨烯异质结构构成了实现2D范德华自旋电子器件的有前景平台。

英文摘要:

In this work we report efficient out-of-plane spin injection and detection in an all-van der Waals based heterostructure using only exfoliated 2D materials. We demonstrate spin injection by measuring spin-valve and Hanle signals in non-local transport in a stack of Fe$_3$GeTe$_2$ (FGT), hexagonal boron nitride (hBN) and graphene layers. FGT flakes form the spin aligning electrodes necessary to inject and detect spins in the graphene channel. The hBN tunnel barrier provides a high-quality interface between the ferromagnetic electrodes and graphene, eliminating the conductivity mismatch problem, thus ensuring efficient spin injection and detection with spin injection efficiencies of up to $P=40$\%. Our results demonstrate that FGT/hBN/graphene heterostructures form a promising platform for realizing 2D van der Waals spintronic devices.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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