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arXiv 2412.02469cond-mat.supr-concond-mat.mes-hall
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Kagome超导体CsV3Sb5薄膜电荷密度波相中的电阻各向异性

Resistive anisotropy in the charge density wave phase of Kagome superconductor CsV3Sb5 thin films

Han-Xin Lou, Xing-Guo Ye, Xin Liao, Tong-Yang Zhao, An-Qi Wang, Da-Peng Yu, Zhi-Min Liao

AI总结:

本研究利用圆形十二电极器件测量CsV3Sb5薄膜电荷密度波相的方向电阻率,发现温度调制的二重各向异性及磁场诱导变化,揭示电子向列性与可能的手性电荷序。

摘要:

我们研究了CsV3Sb5薄膜在电荷密度波相内的电阻各向异性。采用十二个电极呈圆形对称分布的器件结构,我们通过改变电流方向测量电阻率各向异性。研究发现了一种受温度调制的二重电阻率各向异性,这与CsV3Sb5中的电子向列性完全一致,即由电子自由度导致的自发旋转对称性破缺。此外,施加磁场后电阻率各向异性也表现出适度变化,暗示可能存在伴随时间反演对称性破缺的手性电荷序。这些发现为深入理解Kagome材料中的关联电子态提供了深刻洞见,并凸显了CsV3Sb5在二维区间的独特性质。

英文摘要:

We investigate the resistive anisotropy in CsV3Sb5 thin films within the charge density wave phase. Using a device structure with twelve electrodes symmetrically distributed in a circular shape, we measure the resistivity anisotropy by varying the current direction. A twofold resistivity anisotropy modulated by temperature is found, which is fully consistent with the electronic nematicity in CsV3Sb5, that is, the spontaneous rotational symmetry breaking by electronic degree of freedom. Additionally, the resistivity anisotropy also shows modest changes by applying magnetic fields, implying the possible chiral charge orders with time-reversal symmetry breaking. These findings provide deep insights into the correlated electronic states in Kagome materials and highlight the unique properties of CsV3Sb5 in the two-dimensional regime.

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