研究利用多层电子叠层成像定量 Er 注入 4H-SiC 的晶体损伤，结合模拟揭示静态位移对点缺陷检测的限制，并实现深部硅空位及局部应变测量。
摘要：
本文采用多层电子叠层成像（multislice electron ptychography）定量表征 Er 离子注入 4H-SiC 所引入的损伤。通过沿注入方向比较实验重建的体积（每个为 2,000 nm³），对晶体损伤进行定量，并与未受损伤的 SiC 对比。借助模拟，我们证实注入诱导的静态位移同时限制了 Er 掺杂剂和硅空位的检测。实验中发现相应损伤出现在深达 100 nm 的位置，显著深于忽略晶体学的注入模拟所预期的深度。超过该深度后，我们表明可在采样体积内识别硅空位，并用其测量局部应变。总体而言，这些结果凸显了多层电子叠层成像在定量评估注入影响方面的能力，及其作为辅助指导电子器件工艺优化工具的价值。
英文摘要：
Here, we use multislice electron ptychography to quantify damage introduced by ion implantation of Er into 4H-SiC. Comparing reconstructed volumes from experiment (each 2,000 nm$^{3}$) along the implantation direction, the crystal damage is quantified and compared to pristine SiC. Using simulations, we establish that the implantation-induced static displacements limit both Er dopant and silicon vacancy detection. The corresponding damage in the experiment is found to occur up a depth of 100 nm and significantly deeper than expected from implantation simulations, ignoring crystallography. Beyond this depth, we show that silicon vacancies can be identified within the sampled volume and used to measure their local strain. Overall, these results underscore the power of multislice electron ptychography to quantify the impacts of implantation and as a tool to help guide electronic device process optimization.
Trade-off between interface morphology and compositional homogeneity in AlGaAs/GaAs quantum wells revealed by multislice electron ptychography
University of California, Irvine（加州大学尔湾分校）；University of Texas Austin（德克萨斯大学奥斯汀分校）；Irvine Materials Research Institute, University of California Irvine（加州大学尔湾分校欧文材料研究所）
Atomic-Scale Roughness of Freestanding Oxide Membranes Revealed by Electron Ptychography
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences（中国科学院物理研究所凝聚态物理国家实验室）；School of Physical Sciences, University of Chinese Academy of Sciences（中国科学院大学物理科学学院）；Department of Physics, National Cheng Kung University（台湾成功大学物理系）；State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University（清华大学物理系低维量子物理国家重点实验室）；Center for Quantum Frontiers of Research & Technology (QFort), National Cheng Kung University（台湾成功大学量子前沿研究与技术中心）
