AI 中文总结
本研究利用多层电子ptychography实现了Sr₂CuO₃₊δ中氧掺杂剂的原子尺度三维成像，发现其分布受应变场调控，为铜基超导体掺杂调控提供了新参数。
AI 中文摘要
氧掺杂剂在调控铜基超导体性质中起关键作用，但在原子尺度下可视化它们颇具挑战。本研究采用多层电子ptychography直接成像Sr₂CuO₃₊δ薄膜中的氧掺杂剂，观测到氧掺杂剂位于Cu-O链间的间隙位，且强烈倾向于在受拉伸应变区域聚集，这类区域常与位错和界面台阶相关联。这些发现表明铜基超导体中氧掺杂剂分布并非随机，而是对应变场敏感，提示应变可作为一种掺杂调控参数。
英文摘要
Oxygen dopants play a critical role in tuning the properties of cuprate superconductors, yet it is challenging to visualize them at the atomic scale. Here, we use multislice electron ptychography to directly image oxygen dopants in a Sr2CuO3+delta film. We observe oxygen dopants at interstitial sites between the Cu-O chains, with a strong preference for clustering in tensile-strained regions, which are often associated with dislocations and interfacial steps. These findings indicate that the oxygen dopant distribution in cuprates is not random but rather sensitive to strain field, suggesting strain as a doping tuning parameter.
