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arXiv 2408.16660cond-mat.mtrl-scicond-mat.mes-hallcond-mat.supr-conquant-ph
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原位扫描门成像:活体超导量子电路中单个二能级材料缺陷的观测

In-situ scanning gate imaging of individual two-level material defects in live superconducting quantum circuits

M. Hegedüs, R. Banerjee, A. Hutcheson, T. Barker, S. Mahashabde, A. V. Danilov, S. E. Kubatkin, V. Antonov, S. E. de Graaf

AI总结:

本文利用毫开尔文温度下的扫描门显微镜在活体超导量子电路中定位单个二能级系统缺陷,揭示其微观性质及电偶极矩三维取向,为理解其化学起源和缓解策略提供指导。

摘要:

结构无序材料的低温物理由二能级系统缺陷(TLS)主导,尽管经过数十年的研究,其确切起源和性质仍然难以捉摸。近期在实现稳定高相干量子计算平台方面的进展,增加了研究固态量子电路中TLS的重要性,因为它们是退相干和不稳定性的持续来源。在此,我们在毫开尔文温度下对活体超导量子电路进行扫描门显微镜观测,以定位单个TLS。我们的方法直接揭示了TLS的微观性质,并且能够推断单个TLS电偶极矩的三维取向。这些见解,当与底层材料的结构信息相结合时,有助于揭示TLS的详细微观性质和化学起源,为最终缓解策略提供指导。

英文摘要:

The low temperature physics of structurally amorphous materials is governed by two-level system defects (TLS), the exact origin and nature of which remain elusive despite decades of study. Recent advances towards realising stable high-coherence platforms for quantum computing has increased the importance of studying TLS in solid-state quantum circuits, as they are a persistent source of decoherence and instability. Here we perform scanning gate microscopy on a live superconducting quantum circuit at millikelvin temperatures to locate individual TLS. Our method directly reveals the microscopic nature of TLS and is also capable of deducing the three dimensional orientation of individual TLS electric dipole moments. Such insights, when combined with structural information of the underlying materials, can help unravel the detailed microscopic nature and chemical origin of TLS, directing strategies for their eventual mitigation.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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