发表机构
Montanuniversität Leoben（莱奥本矿业大学）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
本研究提出一种利用任意波形发生器和串联分流器测量原位STEM MEMS芯片冷却响应的方法，发现电阻温度演化较慢，时间常数为1.80 ms，平均冷却速率约7.9×10^4 K/s，为快速脉冲加热实验提供了热路径速率界限。
AI 中文摘要
原位快速凝固研究要求以高时间分辨率测量热历史。我们提出了一种简单有效的装置，用于在原位扫描透射电子显微镜（STEM）环境中量化未涂覆的商业Protochips Fusion MEMS芯片的冷却响应。我们通过任意波形发生器（AWG）驱动用户定义的温度程序，同时记录串联分流器上的电压降，以亚毫秒分辨率重建芯片电阻和温度。我们确认了从电流推断出的响应时间；然而，从物理关联的电阻获得的温度$T(R)$演化得更慢。对最大冷却步骤的分析揭示了指数型弛豫，时间常数$\tau=1.80$ ms，与快速扫描量热法报告的滞后常数一致。根据达到温差$\Delta T$的$95\\%$所需的时间，我们测量到平均冷却速率约为$7.9\times 10^{4}$ K/s。稳健性检查包括重复的$R(T)$测量（显示出接近渐近线的适度向下漂移）、10 k$\Omega$测试负载以及小型非占空比任意波形发生器泄漏/偏移的表征。这些发现为使用该芯片平台规划原位电子显微镜实验时，定义了可实现的热路径速率的实际界限。
英文摘要
In-situ rapid solidification studies demand measurements of thermal histories with high temporal resolution. We present a simple, effective setup to quantify the cooling response of an uncoated commercial Protochips Fusion MEMS chip in an in-situ scanning transmission electron microscopy (STEM) context. We drive user-defined temperature programs via an arbitrary waveform generator (AWG), while recording the voltage drops across a series shunt to reconstruct chip resistance and temperature at sub-millisecond resolution. We confirm the response times inferred from the current; however, the temperature obtained from the physically linked resistance, $T(R)$, evolves more slowly. Analysis of the maximum cooling step reveals an exponential-like relaxation with time constant $τ=1.80$ ms, consistent with reported thermal lag constants for fast scanning calorimetry. From the time to reach $95\%$ of the temperature difference $ΔT$, we measure an average cooling rate of $\approx 7.9\times 10^{4}$ K/s. Robustness checks include repeated $R(T)$ measurements (revealing a modest downward drift approaching an asymptote), a 10 k$Ω$ test load, and characterization of small off-duty arbitrary waveform generator leakage/offsets. These findings define practical bounds on achievable thermal-path rates when planning in-situ electron microscopy experiments with this chip platform.
