用于集成光子器件的硫系材料无光刻图案化
Lithography-free patterning of chalcogenide materials for integrated photonic devices
AI总结：
该研究利用硫系材料易氧化特性，提出激光诱导局部氧化的无光刻图案化方法，并在Sb2S3上实现高分辨率折射率调控及多种有源、无源集成光子器件。
摘要：
基于硫系材料的集成光子器件因其独特的宽带透明性而受到广泛关注。尽管这些材料具有公认的CMOS兼容性，但此类器件的制造仍主要依赖光刻技术。然而，硫系薄膜极易氧化，因此在光刻过程中需要定制化工艺流程和复杂的保护措施。这些要求很难与当前面向硅光子学设计的商业CMOS制造平台兼容，从而显著限制了硫系光子器件的实际应用。在本工作中，我们巧妙地利用硫系材料易于氧化的特性，提出了一种新型激光诱导局部氧化技术，用于在硫系薄膜上进行空间图案化，从而实现硫系集成光子器件的简洁无光刻制造。以Sb2S3为例，我们通过实验证明了局部多级氧化：其在近红外波段具有0.7的显著总体折射率反差，并具有0.6 μm的高空间分辨率。基于该技术，我们展示了多种集成光子器件，呈现出多样化功能，包括可见光波段的彩色打印以及近红外区域基于超表面的空间光调制。利用Sb2S3固有的相变特性，还进一步展示了可实现可切换光束聚焦的有源Fresnel波带片，表明简洁制造有源光子器件是可行的。本工作为硫系材料提供了一个全新的调制维度，并为实现硫系集成光子器件提供了一种显著简化的方法。
英文摘要：
Chalcogenide material-based integrated photonic devices have garnered widespread attention due to their unique wideband transparency. Despite their recognized CMOS compatibility, the fabrication of these devices relies predominantly on lithography techniques. However, chalcogenide thin films are highly susceptible to oxidation, necessitating customized process flows and complex protective measures during lithography. These requirements are hardly compatible with current commercial CMOS manufacturing platforms designed for silicon photonics, significantly limiting the practical applications of chalcogenide photonic devices. In this work, we ingeniously exploit the ease of oxidation of chalcogenide materials, presenting a novel laser-induced localized oxidation technique for spatial patterning on chalcogenide thin films, enabling concise lithography-free fabrication of chalcogenide integrated photonic devices. Using Sb2S3 as an example, we experimentally demonstrate localized multi-level oxidation with a sizable overall refractive index contrast of 0.7 at near-infrared, featuring a high spatial resolution of 0.6 um. Based on this technique, multiple integrated photonic devices are demonstrated, showing versatile functionalities, including color printing at visible and metasurface-based spatial light modulation at near-infrared regions. Leveraging the inherent phase-change property of Sb2S3, an active Fresnel zone plate, enabling switchable beam focusing, is further demonstrated, indicating the feasibility of concise fabrication of active photonic devices. Our work offers a brand-new modulation dimension for chalcogenide materials and provides a significantly simplified approach for realizing chalcogenide-integrated photonic devices.
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