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arXiv 2407.08856cond-mat.supr-conquant-ph

超导量子比特用铌薄膜微波损耗的直接测量

Direct Measurement of Microwave Loss in Nb Films for Superconducting Qubits

B. Abdisatarov, D. Bafia, A. Murthy, G. Eremeev, H. E. Elsayed-Ali, J. Lee, A. Netepenko, C. P. A. Carlos, S. Leith, G. J. Rosaz, A. Romanenko, A. Grassellino

AI总结:

本研究通过三维SRF谐振器分离损耗因素,首次直接关联HiPIMS铌薄膜射频损耗与材料参数,发现其量子区微波损耗低、寿命达秒级,明确铌损耗非二维超导量子比特相干时间主要限制,介电氧化物才是关键,并给出铌损耗成为限制的边界。

摘要:

铌薄膜是现代二维超导量子比特的关键组件,但其对量子比特总衰减率的贡献尚未被完全厘清。现有二维量子比特设计中存在不同材料层和界面,导致难以确定主要的损耗通道。本文首次开展此类研究,通过研究三维铌超导射频(SRF)谐振器顶部的高功率脉冲磁控溅射(HiPIMS)薄膜,将薄膜的射频损耗测量结果与材料参数直接关联。借助三维SRF结构,我们能够将铌薄膜损耗与其他贡献因素分离开来。研究结果表明,HiPIMS制备的铌薄膜在量子区域内的微波耗散与创纪录的高本征品质因数体铌SRF腔的耗散相近,寿命可达数秒量级。铌薄膜的微观结构和杂质水平对损耗无显著影响。这些结果确定了铌薄膜的微波损耗量级,表明在现有二维超导量子比特设计中,铌损耗并非观测到的相干时间的主要限制因素,反而凸显了介电氧化物在限制性能方面的主导作用。我们还给出了铌薄膜损耗将成为量子比特寿命限制因素的边界条件。

英文摘要:

Niobium films are a key component in modern two-dimensional superconducting qubits, yet their contribution to the total qubit decay rate is not fully understood. The presence of different layers of materials and interfaces makes it difficult to identify the dominant loss channels in present two-dimensional qubit designs. In this paper we present the first study which directly correlates measurements of RF losses in such films to material parameters by investigating a high-power impulse magnetron sputtered (HiPIMS) film atop a three-dimensional niobium superconducting radiofrequency (SRF) resonator. By using a 3D SRF structure, we are able to isolate the niobium film loss from other contributions. Our findings indicate that microwave dissipation in the HiPIMS-prepared niobium films, within the quantum regime, resembles that of record-high intrinsic quality factor of bulk niobium SRF cavities, with lifetimes extending into seconds. Microstructure and impurity level of the niobium film do not significantly affect the losses. These results set the scale of microwave losses in niobium films and show that niobium losses do not dominate the observed coherence times in present two-dimensional superconducting qubit designs, instead highlighting the dominant role of the dielectric oxide in limiting the performance. We can also set a bound for when niobium film losses will become a limitation for qubit lifetimes.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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