通过聚合物电介质先进界面工程提升钙钛矿光电二极管性能
Improvement of the perovskite photodiodes performance via advanced interface engineering with polymer dielectric
AI总结：
本文通过在钙钛矿光电二极管中引入P(VDF-TrFE)聚合物电介质进行界面工程，有效降低费米能级钉扎和陷阱影响，从而显著提升探测率、响应速度与动态范围。
摘要：
基于卤化物钙钛矿的光电二极管在宽光谱范围内具有高效探测前景。钙钛矿吸收层薄膜具有微晶形貌，其特征是晶粒间界面处存在高密度表面态和缺陷。在本工作中，我们使用介电-铁电聚合物聚（偏氟乙烯-三氟乙烯）P(VDF-TrFE) 来修饰 p-i-n 钙钛矿光电二极管中的体相界面和电子传输结。我们的综合工作表明，P(VDF-TrFE) 界面工程引起显著的费米能级钉扎，使费米能级从本征钙钛矿的 4.85 eV 降低到具有介电中间层结构的 4.28 eV。将 P(VDF-TrFE) 集成到钙钛矿薄膜中并未影响形貌和晶体结构，但显著改变了电荷传输和器件性能。IV 曲线分析和双二极管模型计算表明并联特性增强、非理想因子降低以及饱和暗电流减小。我们证明，将 P(VDF-TrFE) 复合引入吸收层体相及其表面对于减少俘获过程的影响至关重要。对于含 P(VDF-TrFE) 的器件，我们将比探测率从 10^11 Jones 提高到 10^12 Jones，将线性动态范围扩展到 100 dB，并将等效噪声功率降低到 10^-13 W*Hz^-0.5。非辐射复合贡献的降低显著增强了器件性能，将上升/下降时间从 6.3/10.9 us 改善到 4.6/6.5 us。引入电介质后，截止频率（3dB）从 64.8 kHz 提高到 74.8 kHz。这些结果为有机电介质的使用提供了新的见解，并加深了对基于钙钛矿异质结构探测器中陷阱态和离子缺陷补偿的理解。
英文摘要：
Halide perovskite-based photodiodes are promising for efficient detection across a broad spectral range. Perovskite absorber thin-films have a microcrystalline morphology, characterized by a high density of surface states and defects at inter-grain interfaces. In this work, we used dielectric-ferroelectric poly(vinylidene-fluoride-trifluoroethylene-P(VDF-TrFE) to modify the bulk interfaces and electron transport junction in p-i-n perovskite photodiodes. Our complex work demonstrates that interface engineering with P(VDF-TrFE) induces significant Fermi level pinning, reducing from 4.85 eV for intrinsic perovskite to 4.28 eV for the configuration with dielectric interlayers. The integration of P(VDF-TrFE) into the perovskite film did not affect the morphology and crystal structure, but significantly changed the charge transport and device performance. IV curve analysis and 2-diode model calculations showed enhanced shunt properties, a decreased non-ideality factor, and reduced saturation dark current. We have shown that the complex introduction of P(VDF-TrFE) into the absorbers bulk and on its surface is essential to reduce the impact of the trapping processes. For P(VDF-TrFE) containing devices, we increased the specific detectivity from 10^11 to 10^12 Jones, expanded the linear dynamic range up to 100 dB, and reduced the equivalent noise power to 10^-13 W*Hz^-0.5. Reducing non-radiative recombination contributions significantly enhanced device performance, improving rise/fall times from 6.3/10.9 us to 4.6/6.5 us. The cut-off frequency (3dB) increased from 64.8 kHz to 74.8 kHz following the introduction of the dielectric. These results provide new insights into the use of organic dielectrics and an improved understanding of trap-states and ion defect compensation for detectors based on perovskite heterostructures.
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