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arXiv 2404.00519cond-mat.mes-hall
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通过栅极定义的莫尔势垒实现扭转双层石墨烯中的电子准直

Electron Collimation in Twisted Bilayer Graphene via Gate-defined Moiré Barriers

Wei Ren, Xi Zhang, Ziyan Zhu, Moosa Khan, Kenji Watanabe, Takashi Taniguchi, Efthimios Kaxiras, Mitchell Luskin, Ke Wang

AI总结:

本文在扭转双层石墨烯中利用栅极定义的莫尔势垒和莫尔超晶格带隙实现电子准直,并通过双准直器输运测量证明其在实际扭转角不均匀性下仍有效。

摘要:

通过石墨烯 pn 结实现的电子准直允许对弹道电子轨迹进行静电控制,类似于光学电路中的操控。对扭转双层石墨烯(tBLG)中新型关联电子相的类似操控,可以为底层物理提供额外探针,并为先进量子电子学提供器件组件。在本工作中,我们利用莫尔超晶格的能带绝缘体带隙,在 tBLG 器件中展示了通过栅极定义的莫尔势垒对电子流的准直。单个结可以被调谐,以承载常规赝势垒和莫尔隧道势垒的选定组合,由此我们展示了改进的准直效率。通过测量两个间隔 1 μm 的连续莫尔准直器之间的输运,我们证明了在存在实际扭转角不均匀性的情况下,tBLG 中电子准直的证据。

英文摘要:

Electron collimation via a graphene pn-junction allows electrostatic control of ballistic electron trajectories akin to that of an optical circuit. Similar manipulation of novel correlated electronic phases in twisted-bilayer graphene (tBLG) can provide additional probes to the underlying physics and device components towards advanced quantum electronics. In this work, we demonstrate collimation of the electron flow via gate-defined moiré barriers in a tBLG device, utilizing the band-insulator gap of the moiré superlattice. A single junction can be tuned to host a chosen combination of conventional pseudo barrier and moiré tunnel barriers, from which we demonstrate improved collimation efficiency. By measuring transport through two consecutive moiré collimators separated by 1 um, we demonstrate evidence of electron collimation in tBLG in the presence of realistic twist-angle inhomogeneity.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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